Field emission from cone-like single crystalline indium tin oxide nanorods

Hoon Sik Jang; Do Hyung Kim; Hyeong Rag Lee; Sung Youp Lee

doi:10.1016/j.matlet.2004.12.051

Field emission from cone-like single crystalline indium tin oxide nanorods

Hoon Sik Jang, Do Hyung Kim, Hyeong Rag Lee, Sung Youp Lee

Department of Physics

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Cone-like indium tin oxide (ITO) nanorods were synthesized on Au-coated Si wafers via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction, and transmission electron microscopy investigations show that these cone-like structured samples present a high-purity single-crystalline cubic bixbyite structure. Field emission characteristics of the ITO nanorods were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm² is about 3.8 V/μm. A relatively stable emission current was obtained at current density of ∼0.12 mA/cm² without any degradation in emission for 20 h. The field enhancement factor (γ) was determined to be ∼1140 for ITO nanorods, which is comparable to those of carbon nanotubes.

Original language	English
Pages (from-to)	1526-1529
Number of pages	4
Journal	Materials Letters
Volume	59
Issue number	12
DOIs	https://doi.org/10.1016/j.matlet.2004.12.051
State	Published - May 2005

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title = "Field emission from cone-like single crystalline indium tin oxide nanorods",

abstract = "Cone-like indium tin oxide (ITO) nanorods were synthesized on Au-coated Si wafers via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction, and transmission electron microscopy investigations show that these cone-like structured samples present a high-purity single-crystalline cubic bixbyite structure. Field emission characteristics of the ITO nanorods were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.8 V/μm. A relatively stable emission current was obtained at current density of ∼0.12 mA/cm2 without any degradation in emission for 20 h. The field enhancement factor (γ) was determined to be ∼1140 for ITO nanorods, which is comparable to those of carbon nanotubes.",

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AU - Jang, Hoon Sik

AU - Kim, Do Hyung

AU - Lee, Hyeong Rag

AU - Lee, Sung Youp

PY - 2005/5

Y1 - 2005/5

N2 - Cone-like indium tin oxide (ITO) nanorods were synthesized on Au-coated Si wafers via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction, and transmission electron microscopy investigations show that these cone-like structured samples present a high-purity single-crystalline cubic bixbyite structure. Field emission characteristics of the ITO nanorods were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.8 V/μm. A relatively stable emission current was obtained at current density of ∼0.12 mA/cm2 without any degradation in emission for 20 h. The field enhancement factor (γ) was determined to be ∼1140 for ITO nanorods, which is comparable to those of carbon nanotubes.

AB - Cone-like indium tin oxide (ITO) nanorods were synthesized on Au-coated Si wafers via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction, and transmission electron microscopy investigations show that these cone-like structured samples present a high-purity single-crystalline cubic bixbyite structure. Field emission characteristics of the ITO nanorods were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.8 V/μm. A relatively stable emission current was obtained at current density of ∼0.12 mA/cm2 without any degradation in emission for 20 h. The field enhancement factor (γ) was determined to be ∼1140 for ITO nanorods, which is comparable to those of carbon nanotubes.

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SP - 1526

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JO - Materials Letters

JF - Materials Letters

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Field emission from cone-like single crystalline indium tin oxide nanorods

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