First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications

Myungsoo Seo; Min Ho Kang; Seung Bae Jeon; Hagyoul Bae; Jae Hur; Byung Chul Jang; Seokjung Yun; Seongwoo Cho; Wu Kang Kim; Myung Su Kim; Kyu Man Hwang; Seungbum Hong; Sung Yool Choi; Yang Kyu Choi

doi:10.1109/LED.2018.2852698

First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications

Myungsoo Seo, Min Ho Kang, Seung Bae Jeon, Hagyoul Bae, Jae Hur, Byung Chul Jang, Seokjung Yun, Seongwoo Cho, Wu Kang Kim, Myung Su Kim, Kyu Man Hwang, Seungbum Hong, Sung Yool Choi, Yang Kyu Choi

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133 Scopus citations

Abstract

A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrO_X (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.

Original language	English
Article number	8402198
Pages (from-to)	1445-1448
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2852698
State	Published - Sep 2018

Keywords

FinFET
Junctionless FET
ferroelectric FET
neuromorphic computing system
synapse

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10.1109/LED.2018.2852698

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Seo, M., Kang, M. H., Jeon, S. B., Bae, H., Hur, J., Jang, B. C., Yun, S., Cho, S., Kim, W. K., Kim, M. S., Hwang, K. M., Hong, S., Choi, S. Y., & Choi, Y. K. (2018). First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications. IEEE Electron Device Letters, 39(9), 1445-1448. Article 8402198. https://doi.org/10.1109/LED.2018.2852698

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abstract = "A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrOX (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.",

keywords = "FinFET, Junctionless FET, ferroelectric FET, neuromorphic computing system, synapse",

author = "Myungsoo Seo and Kang, {Min Ho} and Jeon, {Seung Bae} and Hagyoul Bae and Jae Hur and Jang, {Byung Chul} and Seokjung Yun and Seongwoo Cho and Kim, {Wu Kang} and Kim, {Myung Su} and Hwang, {Kyu Man} and Seungbum Hong and Choi, {Sung Yool} and Choi, {Yang Kyu}",

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AU - Kang, Min Ho

AU - Jeon, Seung Bae

AU - Bae, Hagyoul

AU - Hur, Jae

AU - Jang, Byung Chul

AU - Yun, Seokjung

AU - Cho, Seongwoo

AU - Kim, Wu Kang

AU - Kim, Myung Su

AU - Hwang, Kyu Man

AU - Hong, Seungbum

AU - Choi, Sung Yool

AU - Choi, Yang Kyu

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AB - A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrOX (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.

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First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications

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