TY - JOUR
T1 - Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition
AU - Jang, Byung Chul
AU - Seong, Hyejeong
AU - Kim, Sung Kyu
AU - Kim, Jong Yun
AU - Koo, Beom Jun
AU - Choi, Junhwan
AU - Yang, Sang Yoon
AU - Im, Sung Gap
AU - Choi, Sung Yool
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/5/25
Y1 - 2016/5/25
N2 - Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 107, stable retention time for 105 s, excellent cycling endurance over 105 cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices.
AB - Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 107, stable retention time for 105 s, excellent cycling endurance over 105 cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices.
KW - Cu filament
KW - flexible memory
KW - highly cross-linked-polymer
KW - initiated chemical vapor deposition (iCVD)
KW - polymer RRAM
UR - http://www.scopus.com/inward/record.url?scp=84973580298&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b01937
DO - 10.1021/acsami.6b01937
M3 - Article
AN - SCOPUS:84973580298
SN - 1944-8244
VL - 8
SP - 12951
EP - 12958
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 20
ER -