Formation of Ge2 Sb2 Te5 - TiOx nanostructures for phase change random access memory applications

Dongbok Lee; Sung Soo Yim; Ho Ki Lyeo; Min Ho Kwon; Dongmin Kang; Hyun Goo Jun; Sung Wook Nam; Ki Bum Kim

doi:10.1149/1.3264734

Formation of Ge₂ Sb₂ Te₅ - TiO_x nanostructures for phase change random access memory applications

Dongbok Lee, Sung Soo Yim, Ho Ki Lyeo, Min Ho Kwon, Dongmin Kang, Hyun Goo Jun, Sung Wook Nam, Ki Bum Kim

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Amorphous Ge₂ Sb₂ Te₅ clusters with a size of 20 nm, self-enclosed by a thin layer of TiO_x, were obtained by cosputtering Ge₂ Sb₂ Te₅ and TiO₂ targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of Ge₂ Sb₂ Te ₅ and TiO_x. The temperature-dependent resistance change results showed that the activation energy for crystallization increased from 2.44±0.76 to 3.84±1.43 eV in the Ge₂ Sb₂ Te₅ film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.

Original language	English
Pages (from-to)	K8-K11
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1149/1.3264734
State	Published - 2010

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title = "Formation of Ge2 Sb2 Te5 - TiOx nanostructures for phase change random access memory applications",

abstract = "Amorphous Ge2 Sb2 Te5 clusters with a size of 20 nm, self-enclosed by a thin layer of TiOx, were obtained by cosputtering Ge2 Sb2 Te5 and TiO2 targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of Ge2 Sb2 Te 5 and TiOx. The temperature-dependent resistance change results showed that the activation energy for crystallization increased from 2.44±0.76 to 3.84±1.43 eV in the Ge2 Sb2 Te5 film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.",

author = "Dongbok Lee and Yim, \{Sung Soo\} and Lyeo, \{Ho Ki\} and Kwon, \{Min Ho\} and Dongmin Kang and Jun, \{Hyun Goo\} and Nam, \{Sung Wook\} and Kim, \{Ki Bum\}",

year = "2010",

doi = "10.1149/1.3264734",

language = "English",

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publisher = "Electrochemical Society Inc.",

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TY - JOUR

T1 - Formation of Ge2 Sb2 Te5 - TiOx nanostructures for phase change random access memory applications

AU - Lee, Dongbok

AU - Yim, Sung Soo

AU - Lyeo, Ho Ki

AU - Kwon, Min Ho

AU - Kang, Dongmin

AU - Jun, Hyun Goo

AU - Nam, Sung Wook

AU - Kim, Ki Bum

PY - 2010

Y1 - 2010

N2 - Amorphous Ge2 Sb2 Te5 clusters with a size of 20 nm, self-enclosed by a thin layer of TiOx, were obtained by cosputtering Ge2 Sb2 Te5 and TiO2 targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of Ge2 Sb2 Te 5 and TiOx. The temperature-dependent resistance change results showed that the activation energy for crystallization increased from 2.44±0.76 to 3.84±1.43 eV in the Ge2 Sb2 Te5 film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.

AB - Amorphous Ge2 Sb2 Te5 clusters with a size of 20 nm, self-enclosed by a thin layer of TiOx, were obtained by cosputtering Ge2 Sb2 Te5 and TiO2 targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of Ge2 Sb2 Te 5 and TiOx. The temperature-dependent resistance change results showed that the activation energy for crystallization increased from 2.44±0.76 to 3.84±1.43 eV in the Ge2 Sb2 Te5 film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.

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U2 - 10.1149/1.3264734

DO - 10.1149/1.3264734

M3 - Article

AN - SCOPUS:74249101284

SN - 1099-0062

VL - 13

SP - K8-K11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Formation of Ge₂ Sb₂ Te₅ - TiO_x nanostructures for phase change random access memory applications

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