Abstract
Thin films of SnO (100 nm thickness) were deposited on glass substrates and interdigitated electrodes by radio frequency magnetron sputtering. The as-prepared samples were annealed separately at 200 °C in air (5 h), air (1 h)-N2 (4 h) and N2 (5 h). The uniformity and surface topology of the films were examined by field emission scanning electron microscopy. In addition to the background of SnO, the existence of SnO2 on the film surface of the sample annealed in air was confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. The effect of the SnO2 layer on the CH4 sensing properties of the SnO film was recorded using a dynamic gas testing system. Moreover, the possible sensing mechanism for the sensing data was also proposed, in which the formation of the SnO2 layers in air was believed to eliminate the p-type sensing behavior of the thin film.
Original language | English |
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Pages (from-to) | 479-483 |
Number of pages | 5 |
Journal | Journal of Nanoelectronics and Optoelectronics |
Volume | 8 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2013 |
Keywords
- Gas Sensor
- RF Magnetron Sputtering
- SnO
- SnO
- Transparent Thin Film