GaAs quantum dots with a high density on a GaAs (111) A substrate

Jong Su Kim; Mun Seok Jeong; Clare C. Byeon; Do Kyeong Ko; Jongmin Lee; Jin Soo Kim; In Soo Kim; Nobuyuki Koguchi

doi:10.1063/1.2213012

GaAs quantum dots with a high density on a GaAs (111) A substrate

Jong Su Kim, Mun Seok Jeong, Clare C. Byeon, Do Kyeong Ko, Jongmin Lee, Jin Soo Kim, In Soo Kim, Nobuyuki Koguchi

Department of Smart Mobility Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

Original language	English
Article number	241911
Journal	Applied Physics Letters
Volume	88
Issue number	24
DOIs	https://doi.org/10.1063/1.2213012
State	Published - 12 Jun 2006

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title = "GaAs quantum dots with a high density on a GaAs (111) A substrate",

abstract = "The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).",

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T1 - GaAs quantum dots with a high density on a GaAs (111) A substrate

AU - Kim, Jong Su

AU - Jeong, Mun Seok

AU - Byeon, Clare C.

AU - Ko, Do Kyeong

AU - Lee, Jongmin

AU - Kim, Jin Soo

AU - Kim, In Soo

AU - Koguchi, Nobuyuki

PY - 2006/6/12

Y1 - 2006/6/12

N2 - The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

AB - The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

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DO - 10.1063/1.2213012

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JO - Applied Physics Letters

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ER -

GaAs quantum dots with a high density on a GaAs (111) A substrate

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