GaAs quantum dots with a high density on a GaAs (111) A substrate

Jong Su Kim; Mun Seok Jeong; Clare C. Byeon; Do Kyeong Ko; Jongmin Lee; Jin Soo Kim; In Soo Kim; Nobuyuki Koguchi

doi:10.1063/1.2213012

GaAs quantum dots with a high density on a GaAs (111) A substrate

Jong Su Kim
, Mun Seok Jeong
, Clare C. Byeon
, Do Kyeong Ko
, Jongmin Lee
, Jin Soo Kim
, In Soo Kim
, Nobuyuki Koguchi

Department of Smart Mobility Engineering

Gwangju Institute of Science and Technology
Electronics and Telecommunications Research Institute
Kyungwoon University
National Institute for Materials Science Tsukuba

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

Original language	English
Article number	241911
Journal	Applied Physics Letters
Volume	88
Issue number	24
DOIs	https://doi.org/10.1063/1.2213012
State	Published - 12 Jun 2006

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title = "GaAs quantum dots with a high density on a GaAs (111) A substrate",

abstract = "The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).",

author = "Kim, \{Jong Su\} and Jeong, \{Mun Seok\} and Byeon, \{Clare C.\} and Ko, \{Do Kyeong\} and Jongmin Lee and Kim, \{Jin Soo\} and Kim, \{In Soo\} and Nobuyuki Koguchi",

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doi = "10.1063/1.2213012",

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T1 - GaAs quantum dots with a high density on a GaAs (111) A substrate

AU - Kim, Jong Su

AU - Jeong, Mun Seok

AU - Byeon, Clare C.

AU - Ko, Do Kyeong

AU - Lee, Jongmin

AU - Kim, Jin Soo

AU - Kim, In Soo

AU - Koguchi, Nobuyuki

PY - 2006/6/12

Y1 - 2006/6/12

N2 - The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

AB - The GaAs quantum dots (QDs) on an AlGaAsGaAs (111) A surface grown by a droplet epitaxy have a density of 1.6× 1011 cm2, which is relatively higher than those (1.3× 1010 cm2) on an AlGaAsGaAs (001) surface. The formation of highly dense GaAs QDs on the (111) A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAsGaAs (111) A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAsGaAs (001), indicating that the QDs on the GaAs (111) A substrate have a high crystal quality and high uniformity than those on GaAs (001).

UR - https://www.scopus.com/pages/publications/33745218526

U2 - 10.1063/1.2213012

DO - 10.1063/1.2213012

M3 - Article

AN - SCOPUS:33745218526

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241911

ER -

GaAs quantum dots with a high density on a GaAs (111) A substrate

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