Gaas/algaas lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy

Sung Ho Hahm; Gyu Seog Cho; Young Se Kwon

doi:10.1143/JJAP.30.L910

Gaas/algaas lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy

Sung Ho Hahm, Gyu Seog Cho, Young Se Kwon

School of Electronics Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED’s. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensedstructure.

Original language	English
Pages (from-to)	L910-L913
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	30
Issue number	5
DOIs	https://doi.org/10.1143/JJAP.30.L910
State	Published - May 1991

Keywords

Integration
Light emitting diode
Liquid phase epitaxy
Meltback etch
Micro-lens

Access to Document

10.1143/JJAP.30.L910

Cite this

@article{fcd9f4b5362947cda9a4d79c0bfaa96a,

title = "Gaas/algaas lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy",

abstract = "AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED{\textquoteright}s. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensedstructure.",

keywords = "Integration, Light emitting diode, Liquid phase epitaxy, Meltback etch, Micro-lens",

author = "Hahm, {Sung Ho} and Cho, {Gyu Seog} and Kwon, {Young Se}",

year = "1991",

month = may,

doi = "10.1143/JJAP.30.L910",

language = "English",

volume = "30",

pages = "L910--L913",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Gaas/algaas lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy

AU - Hahm, Sung Ho

AU - Cho, Gyu Seog

AU - Kwon, Young Se

PY - 1991/5

Y1 - 1991/5

N2 - AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED’s. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensedstructure.

AB - AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED’s. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensedstructure.

KW - Integration

KW - Light emitting diode

KW - Liquid phase epitaxy

KW - Meltback etch

KW - Micro-lens

UR - http://www.scopus.com/inward/record.url?scp=24844443894&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.L910

DO - 10.1143/JJAP.30.L910

M3 - Article

AN - SCOPUS:24844443894

SN - 0021-4922

VL - 30

SP - L910-L913

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5

ER -

Gaas/algaas lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this