GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

Chang Ju Lee; Sang Bum Kang; Hyeon Gu Cha; Chul Ho Won; Seul Ki Hong; Byung Jin Cho; Hongsik Park; Jung Hee Lee; Sung Ho Hahm

doi:10.7567/JJAP.54.06FF08

GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

Chang Ju Lee, Sang Bum Kang, Hyeon Gu Cha, Chul Ho Won, Seul Ki Hong, Byung Jin Cho, Hongsik Park, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 10⁵ and a UV-to-visible rejection ratio of 1.8 × 10³ at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noiselike response at a visible wavelength in the 500nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

Original language	English
Article number	06FF08
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	54
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.54.06FF08
State	Published - 1 Jun 2015

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title = "GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes",

abstract = "We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noiselike response at a visible wavelength in the 500nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.",

author = "Lee, {Chang Ju} and Kang, {Sang Bum} and Cha, {Hyeon Gu} and Won, {Chul Ho} and Hong, {Seul Ki} and Cho, {Byung Jin} and Hongsik Park and Lee, {Jung Hee} and Hahm, {Sung Ho}",

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doi = "10.7567/JJAP.54.06FF08",

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T1 - GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

AU - Lee, Chang Ju

AU - Kang, Sang Bum

AU - Cha, Hyeon Gu

AU - Won, Chul Ho

AU - Hong, Seul Ki

AU - Cho, Byung Jin

AU - Park, Hongsik

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noiselike response at a visible wavelength in the 500nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

AB - We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noiselike response at a visible wavelength in the 500nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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IS - 6

M1 - 06FF08

ER -

GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

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