GaN MISIM diode with high-k dielectrics of ZrO2 and Al2O3 for UV sensing

Gil Ho Lee; Jeong Hoon Seol; Jong Ki An; Ju Young Yun; Sung Ho Hahm

doi:10.1149/07511.0053ecst

GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing

Gil Ho Lee
, Jeong Hoon Seol
, Jong Ki An
, Ju Young Yun
, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University
Korea Research Institute of Standards and Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO₂ and Al₂O₃. The fabricated UV photodiode using ZrO₂ showed better photo-electronic properties than that using Al₂O₃. The dark and photo-responsive current density ratios of the device with ZrO₂ and Al₂O₃ were 250 and 196 at 10 V bias. Their UV/visible rejection ratios (UVRRs) were 1.65 × 10² and 1.34 × 10² for 365 nm wavelength at 1 V bias, respectively. The noise spectral density of the device with ZrO₂ was 1.3 × 10² A₂/Hz for 10 Hz at 3 V bias which has lower noise value than that with Al₂O₃. The GaN MISIM UV photodiode with ZrO₂ has over 20 % improved photo-electronic properties and lower noise than that with Al₂O₃.

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Photonic Devices 9
Editors	C. O'Dwyer, Y. L. Chueh, J. H. He, M. Suzuki, S. Jin, S. W. Kim, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, K. Takei
Publisher	Electrochemical Society Inc.
Pages	53-58
Number of pages	6
Edition	11
ISBN (Electronic)	9781607687283, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07511.0053ecst
State	Published - 2016
Event	Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 9 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2 Oct 2016 → 7 Oct 2016

Publication series

Name	ECS Transactions
Number	11
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 9 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	2/10/16 → 7/10/16

Access to Document

10.1149/07511.0053ecst

Cite this

Lee, G. H., Seol, J. H., An, J. K., Yun, J. Y., & Hahm, S. H. (2016). GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing. In C. O'Dwyer, Y. L. Chueh, J. H. He, M. Suzuki, S. Jin, S. W. Kim, J. C. Ho, Z. Fan, Q. Li, G. W. Hunter, & K. Takei (Eds.), Low-Dimensional Nanoscale Electronic and Photonic Devices 9 (11 ed., pp. 53-58). (ECS Transactions; Vol. 75, No. 11). Electrochemical Society Inc.. https://doi.org/10.1149/07511.0053ecst

Lee, Gil Ho ; Seol, Jeong Hoon ; An, Jong Ki et al. / GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing. Low-Dimensional Nanoscale Electronic and Photonic Devices 9. editor / C. O'Dwyer ; Y. L. Chueh ; J. H. He ; M. Suzuki ; S. Jin ; S. W. Kim ; J. C. Ho ; Z. Fan ; Q. Li ; G. W. Hunter ; K. Takei. 11. ed. Electrochemical Society Inc., 2016. pp. 53-58 (ECS Transactions; 11).

@inproceedings{87acb92d608948b2abdfcafc69114eb3,

title = "GaN MISIM diode with high-k dielectrics of ZrO2 and Al2O3 for UV sensing",

abstract = "We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO2 and Al2O3. The fabricated UV photodiode using ZrO2 showed better photo-electronic properties than that using Al2O3. The dark and photo-responsive current density ratios of the device with ZrO2 and Al2O3 were 250 and 196 at 10 V bias. Their UV/visible rejection ratios (UVRRs) were 1.65 × 102 and 1.34 × 102 for 365 nm wavelength at 1 V bias, respectively. The noise spectral density of the device with ZrO2 was 1.3 × 102 A2/Hz for 10 Hz at 3 V bias which has lower noise value than that with Al2O3. The GaN MISIM UV photodiode with ZrO2 has over 20 \% improved photo-electronic properties and lower noise than that with Al2O3.",

author = "Lee, \{Gil Ho\} and Seol, \{Jeong Hoon\} and An, \{Jong Ki\} and Yun, \{Ju Young\} and Hahm, \{Sung Ho\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 9 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07511.0053ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "53--58",

editor = "C. O'Dwyer and Chueh, \{Y. L.\} and He, \{J. H.\} and M. Suzuki and S. Jin and Kim, \{S. W.\} and Ho, \{J. C.\} and Z. Fan and Q. Li and Hunter, \{G. W.\} and K. Takei",

booktitle = "Low-Dimensional Nanoscale Electronic and Photonic Devices 9",

address = "United States",

edition = "11",

}

Lee, GH, Seol, JH, An, JK, Yun, JY & Hahm, SH 2016, GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing. in C O'Dwyer, YL Chueh, JH He, M Suzuki, S Jin, SW Kim, JC Ho, Z Fan, Q Li, GW Hunter & K Takei (eds), Low-Dimensional Nanoscale Electronic and Photonic Devices 9. 11 edn, ECS Transactions, no. 11, vol. 75, Electrochemical Society Inc., pp. 53-58, Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 9 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2/10/16. https://doi.org/10.1149/07511.0053ecst

GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing. / Lee, Gil Ho; Seol, Jeong Hoon; An, Jong Ki et al.
Low-Dimensional Nanoscale Electronic and Photonic Devices 9. ed. / C. O'Dwyer; Y. L. Chueh; J. H. He; M. Suzuki; S. Jin; S. W. Kim; J. C. Ho; Z. Fan; Q. Li; G. W. Hunter; K. Takei. 11. ed. Electrochemical Society Inc., 2016. p. 53-58 (ECS Transactions; Vol. 75, No. 11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN MISIM diode with high-k dielectrics of ZrO2 and Al2O3 for UV sensing

AU - Lee, Gil Ho

AU - Seol, Jeong Hoon

AU - An, Jong Ki

AU - Yun, Ju Young

AU - Hahm, Sung Ho

PY - 2016

Y1 - 2016

N2 - We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO2 and Al2O3. The fabricated UV photodiode using ZrO2 showed better photo-electronic properties than that using Al2O3. The dark and photo-responsive current density ratios of the device with ZrO2 and Al2O3 were 250 and 196 at 10 V bias. Their UV/visible rejection ratios (UVRRs) were 1.65 × 102 and 1.34 × 102 for 365 nm wavelength at 1 V bias, respectively. The noise spectral density of the device with ZrO2 was 1.3 × 102 A2/Hz for 10 Hz at 3 V bias which has lower noise value than that with Al2O3. The GaN MISIM UV photodiode with ZrO2 has over 20 % improved photo-electronic properties and lower noise than that with Al2O3.

AB - We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO2 and Al2O3. The fabricated UV photodiode using ZrO2 showed better photo-electronic properties than that using Al2O3. The dark and photo-responsive current density ratios of the device with ZrO2 and Al2O3 were 250 and 196 at 10 V bias. Their UV/visible rejection ratios (UVRRs) were 1.65 × 102 and 1.34 × 102 for 365 nm wavelength at 1 V bias, respectively. The noise spectral density of the device with ZrO2 was 1.3 × 102 A2/Hz for 10 Hz at 3 V bias which has lower noise value than that with Al2O3. The GaN MISIM UV photodiode with ZrO2 has over 20 % improved photo-electronic properties and lower noise than that with Al2O3.

UR - https://www.scopus.com/pages/publications/84991490343

U2 - 10.1149/07511.0053ecst

DO - 10.1149/07511.0053ecst

M3 - Conference contribution

AN - SCOPUS:84991490343

T3 - ECS Transactions

SP - 53

EP - 58

BT - Low-Dimensional Nanoscale Electronic and Photonic Devices 9

A2 - O'Dwyer, C.

A2 - Chueh, Y. L.

A2 - He, J. H.

A2 - Suzuki, M.

A2 - Jin, S.

A2 - Kim, S. W.

A2 - Ho, J. C.

A2 - Fan, Z.

A2 - Li, Q.

A2 - Hunter, G. W.

A2 - Takei, K.

PB - Electrochemical Society Inc.

T2 - Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices 9 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Lee GH, Seol JH, An JK, Yun JY, Hahm SH. GaN MISIM diode with high-k dielectrics of ZrO₂ and Al₂O₃ for UV sensing. In O'Dwyer C, Chueh YL, He JH, Suzuki M, Jin S, Kim SW, Ho JC, Fan Z, Li Q, Hunter GW, Takei K, editors, Low-Dimensional Nanoscale Electronic and Photonic Devices 9. 11 ed. Electrochemical Society Inc. 2016. p. 53-58. (ECS Transactions; 11). doi: 10.1149/07511.0053ecst