@inproceedings{397dbd90222c4bd9b2d462648657b4b8,
title = "GaN MSM UV sensor using multi-layer graphene schottky electrodes",
abstract = "We demonstrated a metal-semiconductor-metal type GaN UV sensor for the first time by using multi-layer graphene as a Schottky electrode. Multi-layer graphene shows good Schottky electrode characteristic and fabricated UV sensor shows good UV response characteristics. The maximum dark current density and photo-responsive current density were 6.42 × 10-9 A/cm2 and 5.57 × 10-5 A/cm2 at the 10 V bias, respectively. UV/visible rejection ratios were higher than 103 with each applied bias from 1 V to 15 V.",
keywords = "GaN, Graphene, Metal-semiconductor-metal, Transparent electrode, UV sensor",
author = "Lee, \{Chang Ju\} and Cha, \{Hyeon Gu\} and Hong, \{Seul Ki\} and Doh, \{Seung Hyun\} and Koo, \{Yi Sak\} and Cho, \{Byung Jin\} and Hahm, \{Sung Ho\}",
year = "2014",
doi = "10.4028/www.scientific.net/AMM.481.146",
language = "English",
isbn = "9783037859681",
series = "Applied Mechanics and Materials",
pages = "146--149",
booktitle = "Quantum, Nano, Micro Technologies and Applied Researches",
note = "2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 ; Conference date: 01-12-2013 Through 02-12-2013",
}