Gas sensing characteristics of SnO 2 thin film fabricated by thermal oxidation of a Sn/Pt double layer

Chang Hyun Shim; Dae Sik Lee; Sook I. Hwang; Myoung Bok Lee; Jeung Soo Huh; Duk Dong Lee

doi:10.1016/S0925-4005(01)00949-2

Gas sensing characteristics of SnO ₂ thin film fabricated by thermal oxidation of a Sn/Pt double layer

Chang Hyun Shim, Dae Sik Lee, Sook I. Hwang, Myoung Bok Lee, Jeung Soo Huh, Duk Dong Lee

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

SnO ₂ thin film with homogeneously dispersed nano-crystallite Pt particles was reliably prepared via simple thermal oxidation of a Sn/Pt double layer on Si substrate oxidized. Its surface phase and morphology were probed using some surface sensitive tools such as X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electrical response of SnO ₂ thin films to the i-C ₄H ₁₀ gas was systematically investigated at a wide range of temperatures and gas concentrations. In particular, a long-term stability test of the fabricated Pt/SnO ₂ thin films for the i-C ₄H ₁₀ gas proved its applicability as a reliable gas sensor because of its higher sensing stability than the conventional Pt/SnO ₂ films over a long period of run time.

Original language	English
Pages (from-to)	176-181
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	81
Issue number	2-3
DOIs	https://doi.org/10.1016/S0925-4005(01)00949-2
State	Published - 5 Jan 2002

Keywords

Double layer
Long-term stability
SnO
Thermal oxidation

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10.1016/S0925-4005(01)00949-2

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title = "Gas sensing characteristics of SnO 2 thin film fabricated by thermal oxidation of a Sn/Pt double layer",

abstract = "SnO 2 thin film with homogeneously dispersed nano-crystallite Pt particles was reliably prepared via simple thermal oxidation of a Sn/Pt double layer on Si substrate oxidized. Its surface phase and morphology were probed using some surface sensitive tools such as X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electrical response of SnO 2 thin films to the i-C 4H 10 gas was systematically investigated at a wide range of temperatures and gas concentrations. In particular, a long-term stability test of the fabricated Pt/SnO 2 thin films for the i-C 4H 10 gas proved its applicability as a reliable gas sensor because of its higher sensing stability than the conventional Pt/SnO 2 films over a long period of run time.",

keywords = "Double layer, Long-term stability, SnO, Thermal oxidation",

author = "Shim, {Chang Hyun} and Lee, {Dae Sik} and Hwang, {Sook I.} and Lee, {Myoung Bok} and Huh, {Jeung Soo} and Lee, {Duk Dong}",

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T1 - Gas sensing characteristics of SnO 2 thin film fabricated by thermal oxidation of a Sn/Pt double layer

AU - Shim, Chang Hyun

AU - Lee, Dae Sik

AU - Hwang, Sook I.

AU - Lee, Myoung Bok

AU - Huh, Jeung Soo

AU - Lee, Duk Dong

PY - 2002/1/5

Y1 - 2002/1/5

N2 - SnO 2 thin film with homogeneously dispersed nano-crystallite Pt particles was reliably prepared via simple thermal oxidation of a Sn/Pt double layer on Si substrate oxidized. Its surface phase and morphology were probed using some surface sensitive tools such as X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electrical response of SnO 2 thin films to the i-C 4H 10 gas was systematically investigated at a wide range of temperatures and gas concentrations. In particular, a long-term stability test of the fabricated Pt/SnO 2 thin films for the i-C 4H 10 gas proved its applicability as a reliable gas sensor because of its higher sensing stability than the conventional Pt/SnO 2 films over a long period of run time.

AB - SnO 2 thin film with homogeneously dispersed nano-crystallite Pt particles was reliably prepared via simple thermal oxidation of a Sn/Pt double layer on Si substrate oxidized. Its surface phase and morphology were probed using some surface sensitive tools such as X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electrical response of SnO 2 thin films to the i-C 4H 10 gas was systematically investigated at a wide range of temperatures and gas concentrations. In particular, a long-term stability test of the fabricated Pt/SnO 2 thin films for the i-C 4H 10 gas proved its applicability as a reliable gas sensor because of its higher sensing stability than the conventional Pt/SnO 2 films over a long period of run time.

KW - Double layer

KW - Long-term stability

KW - SnO

KW - Thermal oxidation

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U2 - 10.1016/S0925-4005(01)00949-2

DO - 10.1016/S0925-4005(01)00949-2

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JO - Sensors and Actuators, B: Chemical

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ER -

Gas sensing characteristics of SnO ₂ thin film fabricated by thermal oxidation of a Sn/Pt double layer

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Keywords

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