Gate oxide technology relieving word-line break in 10 nm-class DRAMs

Dongkyu Jang; Taehoon Park; Inkyum Lee; Jongkyu Kim; Sang Bin Ahn; Jieun Lee; Shindeuk Kim; Hyodong Ban; Sung Yun Woo; Yoonki Hong

doi:10.35848/1347-4065/ad9f6e

Gate oxide technology relieving word-line break in 10 nm-class DRAMs

Dongkyu Jang, Taehoon Park, Inkyum Lee, Jongkyu Kim, Sang Bin Ahn, Jieun Lee, Shindeuk Kim, Hyodong Ban, Sung Yun Woo, Yoonki Hong

Research output: Contribution to journal › Article › peer-review

Abstract

Modern dynamic random-access memories (DRAMs) have ultra-high densities due to the high integration of cell arrays, and the length of word-line (WL) has become considerably longer. In particular, maintaining the uniform line profile in the WL of modern 10 nm-class DRAMs is extremely challenging. In this paper, our goal is to investigate the causes of the WL break and propose a new method to solve it. We discuss a novel gate oxide (Gox) formation technology that is able to relieve the WL wiggling and disconnection. 10 nm-class DRAMs are fabricated with the novel Gox technology, and their structure and characteristics are studied.

Original language	English
Article number	01SP04
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	64
Issue number	1
DOIs	https://doi.org/10.35848/1347-4065/ad9f6e
State	Published - 1 Jan 2025

Keywords

6F array scheme
DRAM
gate oxide
word-line

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10.35848/1347-4065/ad9f6e

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abstract = "Modern dynamic random-access memories (DRAMs) have ultra-high densities due to the high integration of cell arrays, and the length of word-line (WL) has become considerably longer. In particular, maintaining the uniform line profile in the WL of modern 10 nm-class DRAMs is extremely challenging. In this paper, our goal is to investigate the causes of the WL break and propose a new method to solve it. We discuss a novel gate oxide (Gox) formation technology that is able to relieve the WL wiggling and disconnection. 10 nm-class DRAMs are fabricated with the novel Gox technology, and their structure and characteristics are studied.",

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AU - Jang, Dongkyu

AU - Park, Taehoon

AU - Lee, Inkyum

AU - Kim, Jongkyu

AU - Ahn, Sang Bin

AU - Lee, Jieun

AU - Kim, Shindeuk

AU - Ban, Hyodong

AU - Woo, Sung Yun

AU - Hong, Yoonki

PY - 2025/1/1

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AB - Modern dynamic random-access memories (DRAMs) have ultra-high densities due to the high integration of cell arrays, and the length of word-line (WL) has become considerably longer. In particular, maintaining the uniform line profile in the WL of modern 10 nm-class DRAMs is extremely challenging. In this paper, our goal is to investigate the causes of the WL break and propose a new method to solve it. We discuss a novel gate oxide (Gox) formation technology that is able to relieve the WL wiggling and disconnection. 10 nm-class DRAMs are fabricated with the novel Gox technology, and their structure and characteristics are studied.

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Gate oxide technology relieving word-line break in 10 nm-class DRAMs

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