Fingerprint
Dive into the research topics of 'Gate oxide technology relieving word-line break in 10 nm-class DRAMs'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
Gate oxide technology relieving word-line break in 10 nm-class DRAMs
- Dongkyu Jang
- , Taehoon Park
- , Inkyum Lee
- , Jongkyu Kim
- , Sang Bin Ahn
- , Jieun Lee
- , Shindeuk Kim
- , Hyodong Ban
- , Sung Yun Woo
- , Yoonki Hong
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations