Gate oxide technology relieving word-line break in 10 nm-class DRAMs
- Dongkyu Jang
- , Taehoon Park
- , Inkyum Lee
- , Jongkyu Kim
- , Sang Bin Ahn
- , Jieun Lee
- , Shindeuk Kim
- , Hyodong Ban
- , Sung Yun Woo
- , Yoonki Hong
- Samsung
- Pusan National University
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations