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Giant piezoelectricity on Si for hyperactive MEMS
S. H. Baek
,
J. Park
, D. M. Kim
, V. A. Aksyuk
, R. R. Das
, S. D. Bu
, D. A. Felker
, J. Lettieri
, V. Vaithyanathan
, S. S.N. Bharadwaja
, N. Bassiri-Gharb
, Y. B. Chen
, H. P. Sun
, C. M. Folkman
, H. W. Jang
, D. J. Kreft
, S. K. Streiffer
, R. Ramesh
, X. Q. Pan
, S. Trolier-McKinstry
D. G. Schlom, M. S. Rzchowski, R. H. Blick, C. B. Eom
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Department of Electrical Engineering
University of Wisconsin
National Institute of Standards and Technology
Pennsylvania State University
University of Michigan, Ann Arbor
Argonne National Laboratory
University of California at Berkeley
Cornell University
Research output
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Contribution to journal
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peer-review
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Engineering
Microelectromechanical System
100%
Piezoelectric
100%
Thin Films
50%
Energy Harvesting
50%
Microcantilevers
25%
Couplings
25%
Heterostructures
25%
Figure of Merit
25%
Actuation
25%
Piezoelectric Coefficient
25%
Si Wafer
25%
Material Science
Piezoelectricity
100%
Microelectromechanical System
100%
Thin Films
40%
Heterojunction
40%
Single Crystal
20%
Electromechanical Coupling
20%
Piezoelectric Property
20%