Grain boundary and its related properties of boron added Y-doped BaTiO3 ceramics

Joon Hyung Lee; Young Woo Heo; Jung A. Lee; Young Dae Ryoo; Jeong Joo Kim; Sang Hee Cho

doi:10.1016/s0167-2738(97)00183-5

Grain boundary and its related properties of boron added Y-doped BaTiO₃ ceramics

Joon Hyung Lee, Young Woo Heo, Jung A. Lee, Young Dae Ryoo, Jeong Joo Kim, Sang Hee Cho

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

As a sintering aid for Y-doped BaTiO₃ ceramics, BN and BaB₂O₄ compounds were chosen, and then sintering behavior and PTCR properties of specimens were investigated with the addition of each boron source. Of the various boron source compounds, BaB₂O₄ greatly lowered the densification starting temperature by the formation of liquid phase around 900°C, lowered room temperature resistivity and improved PTCR effect of specimens. When boron components were added to BaTiO₃ ceramics, the mixture of amorphous and crystallized BaB₂O₄ particles were located at triple junction of solid grains. On the other hand, there existed an amorphous thin film of 3 nm thickness at the two grain junction region.

Original language	English
Pages (from-to)	787-791
Number of pages	5
Journal	Solid State Ionics
Volume	101-103
Issue number	PART 1
DOIs	https://doi.org/10.1016/s0167-2738(97)00183-5
State	Published - Nov 1997

Keywords

Ceramics
Grain boundary
Positive temperature coefficient of resistivity

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10.1016/s0167-2738(97)00183-5

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title = "Grain boundary and its related properties of boron added Y-doped BaTiO3 ceramics",

abstract = "As a sintering aid for Y-doped BaTiO3 ceramics, BN and BaB2O4 compounds were chosen, and then sintering behavior and PTCR properties of specimens were investigated with the addition of each boron source. Of the various boron source compounds, BaB2O4 greatly lowered the densification starting temperature by the formation of liquid phase around 900°C, lowered room temperature resistivity and improved PTCR effect of specimens. When boron components were added to BaTiO3 ceramics, the mixture of amorphous and crystallized BaB2O4 particles were located at triple junction of solid grains. On the other hand, there existed an amorphous thin film of 3 nm thickness at the two grain junction region.",

keywords = "Ceramics, Grain boundary, Positive temperature coefficient of resistivity",

author = "Lee, {Joon Hyung} and Heo, {Young Woo} and Lee, {Jung A.} and Ryoo, {Young Dae} and Kim, {Jeong Joo} and Cho, {Sang Hee}",

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TY - JOUR

T1 - Grain boundary and its related properties of boron added Y-doped BaTiO3 ceramics

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Lee, Jung A.

AU - Ryoo, Young Dae

AU - Kim, Jeong Joo

AU - Cho, Sang Hee

PY - 1997/11

Y1 - 1997/11

N2 - As a sintering aid for Y-doped BaTiO3 ceramics, BN and BaB2O4 compounds were chosen, and then sintering behavior and PTCR properties of specimens were investigated with the addition of each boron source. Of the various boron source compounds, BaB2O4 greatly lowered the densification starting temperature by the formation of liquid phase around 900°C, lowered room temperature resistivity and improved PTCR effect of specimens. When boron components were added to BaTiO3 ceramics, the mixture of amorphous and crystallized BaB2O4 particles were located at triple junction of solid grains. On the other hand, there existed an amorphous thin film of 3 nm thickness at the two grain junction region.

AB - As a sintering aid for Y-doped BaTiO3 ceramics, BN and BaB2O4 compounds were chosen, and then sintering behavior and PTCR properties of specimens were investigated with the addition of each boron source. Of the various boron source compounds, BaB2O4 greatly lowered the densification starting temperature by the formation of liquid phase around 900°C, lowered room temperature resistivity and improved PTCR effect of specimens. When boron components were added to BaTiO3 ceramics, the mixture of amorphous and crystallized BaB2O4 particles were located at triple junction of solid grains. On the other hand, there existed an amorphous thin film of 3 nm thickness at the two grain junction region.

KW - Ceramics

KW - Grain boundary

KW - Positive temperature coefficient of resistivity

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DO - 10.1016/s0167-2738(97)00183-5

M3 - Article

AN - SCOPUS:0031270174

SN - 0167-2738

VL - 101-103

SP - 787

EP - 791

JO - Solid State Ionics

JF - Solid State Ionics

IS - PART 1

ER -

Grain boundary and its related properties of boron added Y-doped BaTiO₃ ceramics

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Keywords

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