Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Jeong Hoon Seol; Sang Bum Kang; Chang Ju Lee; Chul Ho Won; Hongsik Park; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/JSEN.2016.2594185

Graphene/Al₂O₃/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Jeong Hoon Seol
, Sang Bum Kang
, Chang Ju Lee
, Chul Ho Won
, Hongsik Park
, Jung Hee Lee
, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.

Original language	English
Article number	7523318
Pages (from-to)	6903-6907
Number of pages	5
Journal	IEEE Sensors Journal
Volume	16
Issue number	18
DOIs	https://doi.org/10.1109/JSEN.2016.2594185
State	Published - 15 Sep 2016

Keywords

AlGaN/GaN
graphene
MISIM
Schottky electrode
UV sensor

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10.1109/JSEN.2016.2594185

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title = "Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands",

abstract = "We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.",

keywords = "AlGaN/GaN, graphene, MISIM, Schottky electrode, UV sensor",

author = "Seol, \{Jeong Hoon\} and Kang, \{Sang Bum\} and Lee, \{Chang Ju\} and Won, \{Chul Ho\} and Hongsik Park and Lee, \{Jung Hee\} and Hahm, \{Sung Ho\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = sep,

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doi = "10.1109/JSEN.2016.2594185",

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T1 - Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

AU - Seol, Jeong Hoon

AU - Kang, Sang Bum

AU - Lee, Chang Ju

AU - Won, Chul Ho

AU - Park, Hongsik

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2016/9/15

Y1 - 2016/9/15

N2 - We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.

AB - We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.

KW - AlGaN/GaN

KW - graphene

KW - MISIM

KW - Schottky electrode

KW - UV sensor

UR - https://www.scopus.com/pages/publications/84986223598

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SP - 6903

EP - 6907

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 18

M1 - 7523318

ER -

Graphene/Al₂O₃/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

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Keywords

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