Abstract
Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents. Doping of 2 at. % Ti4+ ions increased the dc resistivity by more than three orders of magnitude. In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude. Current-voltage (I-V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant.
Original language | English |
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Article number | 062903 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 6 |
DOIs | |
State | Published - 7 Feb 2005 |