Growth and characterization of BiFeO3 film for novel device applications

H. H. Kim; J. H. Dho; X. Qi; S. K. Kang; J. L. MacManus-Driscoll; D. J. Kang; K. N. Kim; M. G. Blamire

doi:10.1080/00150190600700683

Growth and characterization of BiFeO₃ film for novel device applications

H. H. Kim, J. H. Dho, X. Qi, S. K. Kang, J. L. MacManus-Driscoll, D. J. Kang, K. N. Kim, M. G. Blamire

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Among multiferroic materials, BiFeO 3 (BFO) is much attractive owing to its high Curie temperature (T c ) and Neel temperature (T N ), which presents opportunities for potential device applications at room temperature. Single phase and epitaxial BFO thin films were deposited on SrRuO 3 /SrTiO 3 substrates by pulsed-laser deposition method. BFO film showed the remnant polarization of as large as 45 C/cm 2 and strong immunity for the fatigue cycles up to 10 9 . In addition, the antiferromagnetic nature of BFO film was confirmed by clear appearance of exchange bias of 50 Oe in spin valve system. And, based on the observed multiferroic properties of BFO film, we proposed a novel multi-bit memory cell.

Original language	English
Pages (from-to)	157-163
Number of pages	7
Journal	Ferroelectrics
Volume	333
DOIs	https://doi.org/10.1080/00150190600700683
State	Published - 1 May 2006

Keywords

Bessel transducers
Characterization

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10.1080/00150190600700683

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title = "Growth and characterization of BiFeO3 film for novel device applications",

abstract = "Among multiferroic materials, BiFeO 3 (BFO) is much attractive owing to its high Curie temperature (T c ) and Neel temperature (T N ), which presents opportunities for potential device applications at room temperature. Single phase and epitaxial BFO thin films were deposited on SrRuO 3 /SrTiO 3 substrates by pulsed-laser deposition method. BFO film showed the remnant polarization of as large as 45 C/cm 2 and strong immunity for the fatigue cycles up to 10 9 . In addition, the antiferromagnetic nature of BFO film was confirmed by clear appearance of exchange bias of 50 Oe in spin valve system. And, based on the observed multiferroic properties of BFO film, we proposed a novel multi-bit memory cell.",

keywords = "Bessel transducers, Characterization",

author = "Kim, {H. H.} and Dho, {J. H.} and X. Qi and Kang, {S. K.} and MacManus-Driscoll, {J. L.} and Kang, {D. J.} and Kim, {K. N.} and Blamire, {M. G.}",

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T1 - Growth and characterization of BiFeO3 film for novel device applications

AU - Kim, H. H.

AU - Dho, J. H.

AU - Qi, X.

AU - Kang, S. K.

AU - MacManus-Driscoll, J. L.

AU - Kang, D. J.

AU - Kim, K. N.

AU - Blamire, M. G.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Among multiferroic materials, BiFeO 3 (BFO) is much attractive owing to its high Curie temperature (T c ) and Neel temperature (T N ), which presents opportunities for potential device applications at room temperature. Single phase and epitaxial BFO thin films were deposited on SrRuO 3 /SrTiO 3 substrates by pulsed-laser deposition method. BFO film showed the remnant polarization of as large as 45 C/cm 2 and strong immunity for the fatigue cycles up to 10 9 . In addition, the antiferromagnetic nature of BFO film was confirmed by clear appearance of exchange bias of 50 Oe in spin valve system. And, based on the observed multiferroic properties of BFO film, we proposed a novel multi-bit memory cell.

AB - Among multiferroic materials, BiFeO 3 (BFO) is much attractive owing to its high Curie temperature (T c ) and Neel temperature (T N ), which presents opportunities for potential device applications at room temperature. Single phase and epitaxial BFO thin films were deposited on SrRuO 3 /SrTiO 3 substrates by pulsed-laser deposition method. BFO film showed the remnant polarization of as large as 45 C/cm 2 and strong immunity for the fatigue cycles up to 10 9 . In addition, the antiferromagnetic nature of BFO film was confirmed by clear appearance of exchange bias of 50 Oe in spin valve system. And, based on the observed multiferroic properties of BFO film, we proposed a novel multi-bit memory cell.

KW - Bessel transducers

KW - Characterization

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DO - 10.1080/00150190600700683

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VL - 333

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JO - Ferroelectrics

JF - Ferroelectrics

ER -

Growth and characterization of BiFeO₃ film for novel device applications

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Keywords

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