Abstract
p-Cu2O/n-ZnO nanorod heterojunctions were fabricated by a two-step process. The process was performed with potentiostatic deposition of n-ZnO nanorods on conductive indium-tin-oxide (ITO) glasses followed by potentiostatic deposition of p-Cu2O to form p-Cu2O/n-ZnO nanorod heterojunctions. The deposition condition required to form the cuprous oxide layer affected significantly the formation and microstructure of the p-Cu2O/n-ZnO nanorod heterojunctions. In particular, the high-quality p-Cu2O/n-ZnO nanorod heterojunctions were obtained only at relatively high temperatures of 90 and 100 C. The p-Cu2O/n-ZnO nanorod heterojunctions exhibited a well-defined p-n diode characteristic with an ideality factor of about 4.3.
Original language | English |
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Pages (from-to) | 163-169 |
Number of pages | 7 |
Journal | Journal of Alloys and Compounds |
Volume | 573 |
DOIs | |
State | Published - 2013 |
Keywords
- Crystal growth
- CuO
- Electrodeposition
- Heterojunction