Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Yoon Suk Jeong, Hyunghoon Kim, Ho Seong Lee

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

p-Cu2O/n-ZnO nanorod heterojunctions were fabricated by a two-step process. The process was performed with potentiostatic deposition of n-ZnO nanorods on conductive indium-tin-oxide (ITO) glasses followed by potentiostatic deposition of p-Cu2O to form p-Cu2O/n-ZnO nanorod heterojunctions. The deposition condition required to form the cuprous oxide layer affected significantly the formation and microstructure of the p-Cu2O/n-ZnO nanorod heterojunctions. In particular, the high-quality p-Cu2O/n-ZnO nanorod heterojunctions were obtained only at relatively high temperatures of 90 and 100 C. The p-Cu2O/n-ZnO nanorod heterojunctions exhibited a well-defined p-n diode characteristic with an ideality factor of about 4.3.

Original languageEnglish
Pages (from-to)163-169
Number of pages7
JournalJournal of Alloys and Compounds
Volume573
DOIs
StatePublished - 2013

Keywords

  • Crystal growth
  • CuO
  • Electrodeposition
  • Heterojunction

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