Growth and gas sensing properties of methylammonium tin iodide thin film

Vu Xuan Hien; Pham Tien Hung; Jeongwoo Han; Sangwook Lee; Joon Hyung Lee; Young Woo Heo

doi:10.1016/j.scriptamat.2019.10.049

Growth and gas sensing properties of methylammonium tin iodide thin film

Vu Xuan Hien
, Pham Tien Hung
, Jeongwoo Han
, Sangwook Lee
, Joon Hyung Lee
, Young Woo Heo

Hanoi University of Science and Technology
Kyungpook National University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Methylammonium tin iodide (MASnI₃) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI₃ thin films via thermal evaporation. The growth process of the MASnI₃ thin film was proposed and discussed. The gas sensing properties of the MASnI₃ thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO₂ (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO₂ sensing candidates. The gas sensing mechanism of the device was discussed.

Original language	English
Pages (from-to)	108-113
Number of pages	6
Journal	Scripta Materialia
Volume	178
DOIs	https://doi.org/10.1016/j.scriptamat.2019.10.049
State	Published - 15 Mar 2020

Keywords

CVD
Gas sensor
Halide perovskite
Lead-free
Thin film

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10.1016/j.scriptamat.2019.10.049

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title = "Growth and gas sensing properties of methylammonium tin iodide thin film",

abstract = "Methylammonium tin iodide (MASnI3) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI3 thin films via thermal evaporation. The growth process of the MASnI3 thin film was proposed and discussed. The gas sensing properties of the MASnI3 thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO2 (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO2 sensing candidates. The gas sensing mechanism of the device was discussed.",

keywords = "CVD, Gas sensor, Halide perovskite, Lead-free, Thin film",

author = "Hien, \{Vu Xuan\} and Hung, \{Pham Tien\} and Jeongwoo Han and Sangwook Lee and Lee, \{Joon Hyung\} and Heo, \{Young Woo\}",

note = "Publisher Copyright: {\textcopyright} 2019 Acta Materialia Inc.",

year = "2020",

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doi = "10.1016/j.scriptamat.2019.10.049",

language = "English",

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TY - JOUR

T1 - Growth and gas sensing properties of methylammonium tin iodide thin film

AU - Hien, Vu Xuan

AU - Hung, Pham Tien

AU - Han, Jeongwoo

AU - Lee, Sangwook

AU - Lee, Joon Hyung

AU - Heo, Young Woo

PY - 2020/3/15

Y1 - 2020/3/15

N2 - Methylammonium tin iodide (MASnI3) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI3 thin films via thermal evaporation. The growth process of the MASnI3 thin film was proposed and discussed. The gas sensing properties of the MASnI3 thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO2 (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO2 sensing candidates. The gas sensing mechanism of the device was discussed.

AB - Methylammonium tin iodide (MASnI3) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI3 thin films via thermal evaporation. The growth process of the MASnI3 thin film was proposed and discussed. The gas sensing properties of the MASnI3 thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO2 (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO2 sensing candidates. The gas sensing mechanism of the device was discussed.

KW - CVD

KW - Gas sensor

KW - Halide perovskite

KW - Lead-free

KW - Thin film

UR - https://www.scopus.com/pages/publications/85078696262

U2 - 10.1016/j.scriptamat.2019.10.049

DO - 10.1016/j.scriptamat.2019.10.049

M3 - Article

AN - SCOPUS:85078696262

SN - 1359-6462

VL - 178

SP - 108

EP - 113

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Growth and gas sensing properties of methylammonium tin iodide thin film

Abstract

Keywords

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