Growth and NO2 sensing properties of Cs2SnI6 thin film

Pham Tien Hung; Phung Dinh Hoat; Tien Anh Nguyen; Pham Van Thin; Vu Xuan Hien; Hyo Jun Lim; Sangwook Lee; Joon Hyung Lee; Young Woo Heo

doi:10.1016/j.materresbull.2021.111628

Growth and NO₂ sensing properties of Cs₂SnI₆ thin film

Pham Tien Hung, Phung Dinh Hoat, Tien Anh Nguyen, Pham Van Thin, Vu Xuan Hien, Hyo Jun Lim, Sangwook Lee, Joon Hyung Lee, Young Woo Heo

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, Cs₂SnI₆ thin film was synthesized on a glass substrate through a two-step process using the chemical vapor deposition (CVD) method and was subsequently used as a NO₂ gas sensor. First, the CsI spheres with an average diameter of 360 nm were fabricated on the glass substrate using a CVD system at 240 °C. Second, Cs₂SnI₆ film was formed through the reaction of CsI spheres with SnI₄ vapor at 200 °C for 1 h. Finally, the as-synthesized Cs₂SnI₆ thin film based gas sensor was then fabricated to explore its potential applications. The results indicated that the device showed good selectivity, stability, and detection for NO₂ with low concentration at room temperature. In addition, the effect of humidity on NO₂-sensing performance of the device was further studied. Furthermore, the NO₂ sensing mechanism of the Cs₂SnI₆ thin film was discussed. Hence, this study helps understand the gas sensing mechanism of halide perovskite Cs₂SnI₆ and the room temperature development of NO₂ gas sensors.

Original language	English
Article number	111628
Journal	Materials Research Bulletin
Volume	147
DOIs	https://doi.org/10.1016/j.materresbull.2021.111628
State	Published - Mar 2022

Keywords

CVD method
CsSnI
Halide perovskite
NO
gas sensors

Access to Document

10.1016/j.materresbull.2021.111628

Cite this

@article{6e4a77b560c34f93a4a1811c705bba36,

title = "Growth and NO2 sensing properties of Cs2SnI6 thin film",

abstract = "In this study, Cs2SnI6 thin film was synthesized on a glass substrate through a two-step process using the chemical vapor deposition (CVD) method and was subsequently used as a NO2 gas sensor. First, the CsI spheres with an average diameter of 360 nm were fabricated on the glass substrate using a CVD system at 240 °C. Second, Cs2SnI6 film was formed through the reaction of CsI spheres with SnI4 vapor at 200 °C for 1 h. Finally, the as-synthesized Cs2SnI6 thin film based gas sensor was then fabricated to explore its potential applications. The results indicated that the device showed good selectivity, stability, and detection for NO2 with low concentration at room temperature. In addition, the effect of humidity on NO2-sensing performance of the device was further studied. Furthermore, the NO2 sensing mechanism of the Cs2SnI6 thin film was discussed. Hence, this study helps understand the gas sensing mechanism of halide perovskite Cs2SnI6 and the room temperature development of NO2 gas sensors.",

keywords = "CVD method, CsSnI, Halide perovskite, NO, gas sensors",

author = "Hung, {Pham Tien} and Hoat, {Phung Dinh} and Nguyen, {Tien Anh} and {Van Thin}, Pham and Hien, {Vu Xuan} and Lim, {Hyo Jun} and Sangwook Lee and Lee, {Joon Hyung} and Heo, {Young Woo}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2022",

month = mar,

doi = "10.1016/j.materresbull.2021.111628",

language = "English",

volume = "147",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Growth and NO2 sensing properties of Cs2SnI6 thin film

AU - Hung, Pham Tien

AU - Hoat, Phung Dinh

AU - Nguyen, Tien Anh

AU - Van Thin, Pham

AU - Hien, Vu Xuan

AU - Lim, Hyo Jun

AU - Lee, Sangwook

AU - Lee, Joon Hyung

AU - Heo, Young Woo

PY - 2022/3

Y1 - 2022/3

N2 - In this study, Cs2SnI6 thin film was synthesized on a glass substrate through a two-step process using the chemical vapor deposition (CVD) method and was subsequently used as a NO2 gas sensor. First, the CsI spheres with an average diameter of 360 nm were fabricated on the glass substrate using a CVD system at 240 °C. Second, Cs2SnI6 film was formed through the reaction of CsI spheres with SnI4 vapor at 200 °C for 1 h. Finally, the as-synthesized Cs2SnI6 thin film based gas sensor was then fabricated to explore its potential applications. The results indicated that the device showed good selectivity, stability, and detection for NO2 with low concentration at room temperature. In addition, the effect of humidity on NO2-sensing performance of the device was further studied. Furthermore, the NO2 sensing mechanism of the Cs2SnI6 thin film was discussed. Hence, this study helps understand the gas sensing mechanism of halide perovskite Cs2SnI6 and the room temperature development of NO2 gas sensors.

AB - In this study, Cs2SnI6 thin film was synthesized on a glass substrate through a two-step process using the chemical vapor deposition (CVD) method and was subsequently used as a NO2 gas sensor. First, the CsI spheres with an average diameter of 360 nm were fabricated on the glass substrate using a CVD system at 240 °C. Second, Cs2SnI6 film was formed through the reaction of CsI spheres with SnI4 vapor at 200 °C for 1 h. Finally, the as-synthesized Cs2SnI6 thin film based gas sensor was then fabricated to explore its potential applications. The results indicated that the device showed good selectivity, stability, and detection for NO2 with low concentration at room temperature. In addition, the effect of humidity on NO2-sensing performance of the device was further studied. Furthermore, the NO2 sensing mechanism of the Cs2SnI6 thin film was discussed. Hence, this study helps understand the gas sensing mechanism of halide perovskite Cs2SnI6 and the room temperature development of NO2 gas sensors.

KW - CVD method

KW - CsSnI

KW - Halide perovskite

KW - NO

KW - gas sensors

UR - http://www.scopus.com/inward/record.url?scp=85119034764&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2021.111628

DO - 10.1016/j.materresbull.2021.111628

M3 - Article

AN - SCOPUS:85119034764

SN - 0025-5408

VL - 147

JO - Materials Research Bulletin

JF - Materials Research Bulletin

M1 - 111628

ER -

Growth and NO₂ sensing properties of Cs₂SnI₆ thin film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this