Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE

J. Q. Xie, J. W. Dong, A. Osinsky, P. P. Chow, Y. W. Heo, D. P. Norton, S. J. Pearton, X. Y. Dong, C. Adelmann, C. J. Palmstrøm

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

ZnO thin films have been epitaxially grown on r-plane sapphire by RF-plasma-assisted molecular beam epitaxy. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies indicate that the epitaxial relationship between ZnO and r-plane sapphire is (112̄0 ) ZnO // (11̄02) Sapphire and [0001] ZnO // [1̄101] sapphire. Atomic force microscopy measurements reveal islands extended along the sapphire [1̄101 ] direction. XRD omega rocking curves for the ZnO (112̄0) reflection measured either parallel or perpendicular to the island direction suggest the defect density anisotropy along these directions. Due to the small lattice mismatch along the ZnO [0001] direction, few misfit dislocations were observed at the ZnO/Al 2O 3 interface in the high-resolution cross-sectional TEM image with the zone axis along the ZnO [11̄00] direction.

Original languageEnglish
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages407-412
Number of pages6
StatePublished - 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20051 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Conference

Conference2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period28/11/051/12/05

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