Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method

Vu Xuan Hien; Se Yun Kim; Joon Hyung Lee; Jeong Joo Kim; Young Woo Heo

doi:10.1016/j.jcrysgro.2013.09.019

Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method

Vu Xuan Hien, Se Yun Kim, Joon Hyung Lee, Jeong Joo Kim, Young Woo Heo

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Copper oxide nanowires (diameter: 10-100 nm and length: 7-10 μm) were grown on copper foil deposited with etched graphene. The growth processes of CuO nanowires on the surface of Cu foil and graphene-deposited Cu foil in conditions of 450 C treatment temperature and different treatment times in air were compared based on field emission scanning electron microscopy images. The formation of seeds, the transportation of source and the growth of CuO nanowires during the treatment were described in detail based on surface melting phenomenon and Wagner's theory. In addition, selected samples were characterized by X-ray diffraction, transmission electron microscopy, high resolution TEM and selected area electron diffraction to support the discussion.

Original language	English
Pages (from-to)	100-106
Number of pages	7
Journal	Journal of Crystal Growth
Volume	384
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.09.019
State	Published - 2013

Keywords

A1. Crystal structure
A1. Surfaces
A2. Growth from melt
B1. Copper oxide nanowires
B1. Graphene
B3. Field effect transistor

Access to Document

10.1016/j.jcrysgro.2013.09.019

Cite this

@article{c464f8a6b4ba4afa85efb0df5b52aa4b,

title = "Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method",

abstract = "Copper oxide nanowires (diameter: 10-100 nm and length: 7-10 μm) were grown on copper foil deposited with etched graphene. The growth processes of CuO nanowires on the surface of Cu foil and graphene-deposited Cu foil in conditions of 450 C treatment temperature and different treatment times in air were compared based on field emission scanning electron microscopy images. The formation of seeds, the transportation of source and the growth of CuO nanowires during the treatment were described in detail based on surface melting phenomenon and Wagner's theory. In addition, selected samples were characterized by X-ray diffraction, transmission electron microscopy, high resolution TEM and selected area electron diffraction to support the discussion.",

keywords = "A1. Crystal structure, A1. Surfaces, A2. Growth from melt, B1. Copper oxide nanowires, B1. Graphene, B3. Field effect transistor",

author = "Hien, {Vu Xuan} and Kim, {Se Yun} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Heo, {Young Woo}",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.09.019",

language = "English",

volume = "384",

pages = "100--106",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method

AU - Hien, Vu Xuan

AU - Kim, Se Yun

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Heo, Young Woo

PY - 2013

Y1 - 2013

N2 - Copper oxide nanowires (diameter: 10-100 nm and length: 7-10 μm) were grown on copper foil deposited with etched graphene. The growth processes of CuO nanowires on the surface of Cu foil and graphene-deposited Cu foil in conditions of 450 C treatment temperature and different treatment times in air were compared based on field emission scanning electron microscopy images. The formation of seeds, the transportation of source and the growth of CuO nanowires during the treatment were described in detail based on surface melting phenomenon and Wagner's theory. In addition, selected samples were characterized by X-ray diffraction, transmission electron microscopy, high resolution TEM and selected area electron diffraction to support the discussion.

AB - Copper oxide nanowires (diameter: 10-100 nm and length: 7-10 μm) were grown on copper foil deposited with etched graphene. The growth processes of CuO nanowires on the surface of Cu foil and graphene-deposited Cu foil in conditions of 450 C treatment temperature and different treatment times in air were compared based on field emission scanning electron microscopy images. The formation of seeds, the transportation of source and the growth of CuO nanowires during the treatment were described in detail based on surface melting phenomenon and Wagner's theory. In addition, selected samples were characterized by X-ray diffraction, transmission electron microscopy, high resolution TEM and selected area electron diffraction to support the discussion.

KW - A1. Crystal structure

KW - A1. Surfaces

KW - A2. Growth from melt

KW - B1. Copper oxide nanowires

KW - B1. Graphene

KW - B3. Field effect transistor

UR - http://www.scopus.com/inward/record.url?scp=84885414695&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.09.019

DO - 10.1016/j.jcrysgro.2013.09.019

M3 - Article

AN - SCOPUS:84885414695

SN - 0022-0248

VL - 384

SP - 100

EP - 106

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this