Growth of four-fold grained K3Li2Nb5O15 thin film using RF-magnctron sputtering

Sung Kun Park; Min Soo Baek; Seoung Choon Bae; Sung Yeol Kwon; Jee Hyun Kim; Ki Wan Kim

doi:10.1143/jjap.38.6483

Growth of four-fold grained K₃Li₂Nb₅O₁₅ thin film using RF-magnctron sputtering

Sung Kun Park, Min Soo Baek, Seoung Choon Bae, Sung Yeol Kwon, Jee Hyun Kim, Ki Wan Kim

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

K₃Li₂Nb₅O₁₅ (KLM) thin films were prepared using an rf-magnelron sputtering technique with a sintered ceramic target containing 60mol% and 30mol% excess K and Li, compared with sloichiomctric KLM, respectively. In this experiment the optimum sputtering conditions were an rf power of 100W, a working pressure of ISOmTorr, and a substrate temperature of 600°C. When KLN was grown on a Pl/Ti/SiO₂/Si(100) substrate at a temperature of 600°C with 150 mTorr, the thin film KLN was (OOl)-orientcd with diffraction peaks from the (311) plane. The re-vaporization of the volatile clement on the substrate was successfully suppressed by increasing the sputtering pressure. In this work 4-fold grains of KLN thin film and the growth mechanism of 4-fold symmetric grains were both observed for the first time.

Original language	English
Pages (from-to)	6483-6486
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	11
DOIs	https://doi.org/10.1143/jjap.38.6483
State	Published - 1999

Keywords

4-fold symmetry
KLN
Preferred orientation
Tetragonal tungsten-bronze
Thin film

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title = "Growth of four-fold grained K3Li2Nb5O15 thin film using RF-magnctron sputtering",

abstract = "K3Li2Nb5O15 (KLM) thin films were prepared using an rf-magnelron sputtering technique with a sintered ceramic target containing 60mol% and 30mol% excess K and Li, compared with sloichiomctric KLM, respectively. In this experiment the optimum sputtering conditions were an rf power of 100W, a working pressure of ISOmTorr, and a substrate temperature of 600°C. When KLN was grown on a Pl/Ti/SiO2/Si(100) substrate at a temperature of 600°C with 150 mTorr, the thin film KLN was (OOl)-orientcd with diffraction peaks from the (311) plane. The re-vaporization of the volatile clement on the substrate was successfully suppressed by increasing the sputtering pressure. In this work 4-fold grains of KLN thin film and the growth mechanism of 4-fold symmetric grains were both observed for the first time.",

keywords = "4-fold symmetry, KLN, Preferred orientation, Tetragonal tungsten-bronze, Thin film",

author = "Park, {Sung Kun} and Baek, {Min Soo} and Bae, {Seoung Choon} and Kwon, {Sung Yeol} and Kim, {Jee Hyun} and Kim, {Ki Wan}",

year = "1999",

doi = "10.1143/jjap.38.6483",

language = "English",

volume = "38",

pages = "6483--6486",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - Growth of four-fold grained K3Li2Nb5O15 thin film using RF-magnctron sputtering

AU - Park, Sung Kun

AU - Baek, Min Soo

AU - Bae, Seoung Choon

AU - Kwon, Sung Yeol

AU - Kim, Jee Hyun

AU - Kim, Ki Wan

PY - 1999

Y1 - 1999

N2 - K3Li2Nb5O15 (KLM) thin films were prepared using an rf-magnelron sputtering technique with a sintered ceramic target containing 60mol% and 30mol% excess K and Li, compared with sloichiomctric KLM, respectively. In this experiment the optimum sputtering conditions were an rf power of 100W, a working pressure of ISOmTorr, and a substrate temperature of 600°C. When KLN was grown on a Pl/Ti/SiO2/Si(100) substrate at a temperature of 600°C with 150 mTorr, the thin film KLN was (OOl)-orientcd with diffraction peaks from the (311) plane. The re-vaporization of the volatile clement on the substrate was successfully suppressed by increasing the sputtering pressure. In this work 4-fold grains of KLN thin film and the growth mechanism of 4-fold symmetric grains were both observed for the first time.

AB - K3Li2Nb5O15 (KLM) thin films were prepared using an rf-magnelron sputtering technique with a sintered ceramic target containing 60mol% and 30mol% excess K and Li, compared with sloichiomctric KLM, respectively. In this experiment the optimum sputtering conditions were an rf power of 100W, a working pressure of ISOmTorr, and a substrate temperature of 600°C. When KLN was grown on a Pl/Ti/SiO2/Si(100) substrate at a temperature of 600°C with 150 mTorr, the thin film KLN was (OOl)-orientcd with diffraction peaks from the (311) plane. The re-vaporization of the volatile clement on the substrate was successfully suppressed by increasing the sputtering pressure. In this work 4-fold grains of KLN thin film and the growth mechanism of 4-fold symmetric grains were both observed for the first time.

KW - 4-fold symmetry

KW - KLN

KW - Preferred orientation

KW - Tetragonal tungsten-bronze

KW - Thin film

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U2 - 10.1143/jjap.38.6483

DO - 10.1143/jjap.38.6483

M3 - Article

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SN - 0021-4922

VL - 38

SP - 6483

EP - 6486

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11

ER -

Growth of four-fold grained K₃Li₂Nb₅O₁₅ thin film using RF-magnctron sputtering

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