Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD

J. H. Lee; H. M. Ko; I. H. Lee; Y. J. Park; Y. H. Lee; M. B. Lee; S. H. Hahm

doi:10.1002/pssc.200390000

Growth of high quality Al_xGa_1-xN with high Al-composition for Schottky-type UV detector using MOCVD

J. H. Lee, H. M. Ko, I. H. Lee, Y. J. Park, Y. H. Lee, M. B. Lee, S. H. Hahm

School of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Crack-free Al_xGa_1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) Al_xGa_1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al _0.33Ga_0.67N/10 nm thick LT-Al_0.33Ga _0.67N interlayer/2 μm thick n⁺-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼10⁴, and responsivity of 0.15 A/W at 280 nm.

Original language	English
Pages (from-to)	103-106
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390000
State	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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title = "Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD",

abstract = "Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.",

author = "Lee, {J. H.} and Ko, {H. M.} and Lee, {I. H.} and Park, {Y. J.} and Lee, {Y. H.} and Lee, {M. B.} and Hahm, {S. H.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390000",

language = "English",

pages = "103--106",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

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TY - JOUR

T1 - Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD

AU - Lee, J. H.

AU - Ko, H. M.

AU - Lee, I. H.

AU - Park, Y. J.

AU - Lee, Y. H.

AU - Lee, M. B.

AU - Hahm, S. H.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.

AB - Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.

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U2 - 10.1002/pssc.200390000

DO - 10.1002/pssc.200390000

M3 - Conference article

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SN - 1610-1634

SP - 103

EP - 106

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Growth of high quality Al_xGa_1-xN with high Al-composition for Schottky-type UV detector using MOCVD

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