Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applications

We propose a tunneling field-effect transistor (TFET) with a heteromaterial (HM)-gate not only for low standby power (LSTP) applications, which TFETs are genuinely suitable for, but also for highspeed performance by properly adjusting intrinsic gate capacitance (Cgg -. As a result of simulations in this work, the HM-gate TFET showed better subthreshold characteristics (smaller S ) at an appropriate threshold voltage (Vth - for LSTP applications, enhancing tunneling probability by modulating the difference in the metal workfunction (-m - between the source-side gate (S-gate) and the drainside gate (D-gate). Further, the Cgg of HM-gate TFET were extracted and compared against that of conventional TFETs having gates with various -m 's. Since lower Cgg can be formed by high -m in the D-gate, the HM-gate TFET has an excellent cut-off frequency (fT - and intrinsic delay time (- ) associated with the Cgg . We confirmed that the HM-gate TFET proposed in this work achieves superb performance for LSTP applications as well as high-frequency operations.