@inproceedings{5b27ff579da24dae8b5d39360d5d7e11,
title = "High density inductively coupled plasma etching of zinc-oxide and indium-zinc oxide",
abstract = "The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI3. In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI3-based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. Also, CH4/H2 -based discharges are attractive for dry etching of single crystal ZnO because of their non-corrosive nature. The C 2H6/H2/Ar mixture provides a strong enhancement over pure Ar sputtering, in sharp contrast to the case of CH4/H 2/Ar. The etched surface morphologies were smooth, independent of the chemistry and the Zn/O ratio in the near-surface region was unchanged within experimental error after etching with all chemistries.",
author = "Wantae Lim and Luc Stafford and Gila, \{Brent P.\} and Norton, \{David P.\} and Pearton, \{Stephen J.\} and Fan Ren and Song, \{Ju Il\} and Park, \{Jae Soung\} and Heo, \{Young Woo\} and Lee, \{Joon Hyung\} and Kim, \{Jeong Joo\}",
year = "2007",
doi = "10.1149/1.2731191",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "239--247",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
address = "United States",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}