High-density plasma etching of indium-zinc oxide films in Ar/Cl                         2                          and Ar/CH                         4                         /H                         2                          chemistries

W. T. Lim; L. Stafford; Ju Il Song; Jae Soung Park; Y. W. Heo; Joon Hyung Lee; Jeong Joo Kim; S. J. Pearton

doi:10.1016/j.apsusc.2006.05.052

High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries

W. T. Lim, L. Stafford, Ju Il Song, Jae Soung Park, Y. W. Heo, Joon Hyung Lee, Jeong Joo Kim, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl ₂ -based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH ₄ /H ₂ /Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl ₂ discharges is smooth, whereas that after etching in CH ₄ /H ₂ /Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH ₄ /H ₂ /Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH ₄ /H ₂ /Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.

Original language	English
Pages (from-to)	2752-2757
Number of pages	6
Journal	Applied Surface Science
Volume	253
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2006.05.052
State	Published - 30 Dec 2006

Keywords

Dry etching
Indium-zinc oxide

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10.1016/j.apsusc.2006.05.052

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Lim, W. T., Stafford, L., Song, J. I., Park, J. S., Heo, Y. W., Lee, J. H., Kim, J. J., & Pearton, S. J. (2006). High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries Applied Surface Science, 253(5), 2752-2757. https://doi.org/10.1016/j.apsusc.2006.05.052

Lim, W. T. ; Stafford, L. ; Song, Ju Il et al. / High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries In: Applied Surface Science. 2006 ; Vol. 253, No. 5. pp. 2752-2757.

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title = " High-density plasma etching of indium-zinc oxide films in Ar/Cl 2 and Ar/CH 4 /H 2 chemistries ",

abstract = " The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl 2 -based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH 4 /H 2 /Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl 2 discharges is smooth, whereas that after etching in CH 4 /H 2 /Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH 4 /H 2 /Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH 4 /H 2 /Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.",

keywords = "Dry etching, Indium-zinc oxide",

author = "Lim, {W. T.} and L. Stafford and Song, {Ju Il} and Park, {Jae Soung} and Heo, {Y. W.} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Pearton, {S. J.}",

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month = dec,

day = "30",

doi = "10.1016/j.apsusc.2006.05.052",

language = "English",

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Lim, WT, Stafford, L, Song, JI, Park, JS, Heo, YW , Lee, JH, Kim, JJ & Pearton, SJ 2006, ' High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries ', Applied Surface Science, vol. 253, no. 5, pp. 2752-2757. https://doi.org/10.1016/j.apsusc.2006.05.052

High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries . / Lim, W. T.; Stafford, L.; Song, Ju Il et al.
In: Applied Surface Science, Vol. 253, No. 5, 30.12.2006, p. 2752-2757.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High-density plasma etching of indium-zinc oxide films in Ar/Cl 2 and Ar/CH 4 /H 2 chemistries

AU - Lim, W. T.

AU - Stafford, L.

AU - Song, Ju Il

AU - Park, Jae Soung

AU - Heo, Y. W.

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Pearton, S. J.

PY - 2006/12/30

Y1 - 2006/12/30

N2 - The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl 2 -based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH 4 /H 2 /Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl 2 discharges is smooth, whereas that after etching in CH 4 /H 2 /Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH 4 /H 2 /Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH 4 /H 2 /Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.

AB - The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl 2 -based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH 4 /H 2 /Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl 2 discharges is smooth, whereas that after etching in CH 4 /H 2 /Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH 4 /H 2 /Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH 4 /H 2 /Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.

KW - Dry etching

KW - Indium-zinc oxide

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Lim WT, Stafford L, Song JI, Park JS, Heo YW , Lee JH et al. High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries Applied Surface Science. 2006 Dec 30;253(5):2752-2757. doi: 10.1016/j.apsusc.2006.05.052

High-density plasma etching of indium-zinc oxide films in Ar/Cl ₂ and Ar/CH ₄ /H ₂ chemistries

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