High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Shuichiro Yamamoto; Yuji Zhao; Chih Chien Pan; Roy B. Chung; Kenji Fujito; Junichi Sonoda; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/APEX.3.122102

High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Shuichiro Yamamoto, Yuji Zhao, Chih Chien Pan, Roy B. Chung, Kenji Fujito, Junichi Sonoda, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

188 Scopus citations

Abstract

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

Original language	English
Article number	122102
Journal	Applied Physics Express
Volume	3
Issue number	12
DOIs	https://doi.org/10.1143/APEX.3.122102
State	Published - Dec 2010

Access to Document

10.1143/APEX.3.122102

Cite this

@article{442808c38a914e18b26dbdad8f70e881,

title = "High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2{\=0}21) GaN substrates",

abstract = "We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (2{\=0}21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.",

author = "Shuichiro Yamamoto and Yuji Zhao and Pan, {Chih Chien} and Chung, {Roy B.} and Kenji Fujito and Junichi Sonoda and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2010",

month = dec,

doi = "10.1143/APEX.3.122102",

language = "English",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

AU - Yamamoto, Shuichiro

AU - Zhao, Yuji

AU - Pan, Chih Chien

AU - Chung, Roy B.

AU - Fujito, Kenji

AU - Sonoda, Junichi

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/12

Y1 - 2010/12

N2 - We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

AB - We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

UR - http://www.scopus.com/inward/record.url?scp=78650877975&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.122102

DO - 10.1143/APEX.3.122102

M3 - Article

AN - SCOPUS:78650877975

SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 12

M1 - 122102

ER -

High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this