High fT 0.05μm in0.52AlAs/In0.53GaAs HEMT's with strained 5nm InAs Sub-channel on InP substrate

Dae Hyun Kim; Hun Hee Noh; Kang Min Lee; Jae Hak Lee; Wei Feng; Xiaogang Xie; Quangang Du; Jian Jiang; Kwang Seok Seo

High f_T 0.05μm in_0.52AlAs/In_0.53GaAs HEMT's with strained 5nm InAs Sub-channel on InP substrate

Dae Hyun Kim, Hun Hee Noh, Kang Min Lee, Jae Hak Lee, Wei Feng, Xiaogang Xie, Quangang Du, Jian Jiang, Kwang Seok Seo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The excellent high-frequency performance of the 5nm InAs-inserted-channel high electron mobility transistors (HEMT) with a 0.05μm gate length through the conventional T-gate fabrication was analyzed. Well pinch-off characteristics are obtained and maximum extrinsic transconductance is above 1S/mm even at a lower drain voltage of 0.7V. The most important favorable impact resulting from InAs-inserted-channel concept lies mainly in the obvious alleviation of the short-channel effects, owing to the effective channel thinning. The excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5nm InAs-inserted-channel design concept.

Original language	English
Pages (from-to)	558-559
Number of pages	2
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004

Cite this

@article{d0989063f19b466b9035b422420fe91a,

title = "High fT 0.05μm in0.52AlAs/In0.53GaAs HEMT's with strained 5nm InAs Sub-channel on InP substrate",

abstract = "The excellent high-frequency performance of the 5nm InAs-inserted-channel high electron mobility transistors (HEMT) with a 0.05μm gate length through the conventional T-gate fabrication was analyzed. Well pinch-off characteristics are obtained and maximum extrinsic transconductance is above 1S/mm even at a lower drain voltage of 0.7V. The most important favorable impact resulting from InAs-inserted-channel concept lies mainly in the obvious alleviation of the short-channel effects, owing to the effective channel thinning. The excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5nm InAs-inserted-channel design concept.",

author = "Kim, {Dae Hyun} and Noh, {Hun Hee} and Lee, {Kang Min} and Lee, {Jae Hak} and Wei Feng and Xiaogang Xie and Quangang Du and Jian Jiang and Seo, {Kwang Seok}",

year = "2004",

language = "English",

pages = "558--559",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

TY - JOUR

T1 - High fT 0.05μm in0.52AlAs/In0.53GaAs HEMT's with strained 5nm InAs Sub-channel on InP substrate

AU - Kim, Dae Hyun

AU - Noh, Hun Hee

AU - Lee, Kang Min

AU - Lee, Jae Hak

AU - Feng, Wei

AU - Xie, Xiaogang

AU - Du, Quangang

AU - Jiang, Jian

AU - Seo, Kwang Seok

PY - 2004

Y1 - 2004

N2 - The excellent high-frequency performance of the 5nm InAs-inserted-channel high electron mobility transistors (HEMT) with a 0.05μm gate length through the conventional T-gate fabrication was analyzed. Well pinch-off characteristics are obtained and maximum extrinsic transconductance is above 1S/mm even at a lower drain voltage of 0.7V. The most important favorable impact resulting from InAs-inserted-channel concept lies mainly in the obvious alleviation of the short-channel effects, owing to the effective channel thinning. The excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5nm InAs-inserted-channel design concept.

AB - The excellent high-frequency performance of the 5nm InAs-inserted-channel high electron mobility transistors (HEMT) with a 0.05μm gate length through the conventional T-gate fabrication was analyzed. Well pinch-off characteristics are obtained and maximum extrinsic transconductance is above 1S/mm even at a lower drain voltage of 0.7V. The most important favorable impact resulting from InAs-inserted-channel concept lies mainly in the obvious alleviation of the short-channel effects, owing to the effective channel thinning. The excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5nm InAs-inserted-channel design concept.

UR - http://www.scopus.com/inward/record.url?scp=23744477991&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23744477991

SN - 1092-8669

SP - 558

EP - 559

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

High f_T 0.05μm in_0.52AlAs/In_0.53GaAs HEMT's with strained 5nm InAs Sub-channel on InP substrate

Abstract

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