High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong; Wi Hyoung Lee; Dong Yun Lee; Beom Joon Kim; Jeong Ho Cho; Kilwon Cho

doi:10.1063/1.3428357

High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong, Wi Hyoung Lee, Dong Yun Lee, Beom Joon Kim, Jeong Ho Cho, Kilwon Cho

Research output: Contribution to journal › Article › peer-review

118 Scopus citations

Abstract

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm ² /V s, ON/OFF current ratios were 10⁵, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Original language	English
Article number	192115
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3428357
State	Published - 2010

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title = "High-mobility low-temperature ZnO transistors with low-voltage operation",

abstract = "Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.",

author = "Hyojin Bong and Lee, {Wi Hyoung} and Lee, {Dong Yun} and Kim, {Beom Joon} and Cho, {Jeong Ho} and Kilwon Cho",

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volume = "96",

journal = "Applied Physics Letters",

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T1 - High-mobility low-temperature ZnO transistors with low-voltage operation

AU - Bong, Hyojin

AU - Lee, Wi Hyoung

AU - Lee, Dong Yun

AU - Kim, Beom Joon

AU - Cho, Jeong Ho

AU - Cho, Kilwon

PY - 2010

Y1 - 2010

N2 - Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

AB - Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=77952997651&partnerID=8YFLogxK

U2 - 10.1063/1.3428357

DO - 10.1063/1.3428357

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 192115

ER -

High-mobility low-temperature ZnO transistors with low-voltage operation

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