High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes

Yuji Zhao; Shinichi Tanaka; Qimin Yan; Chia Yen Huang; Roy B. Chung; Chih Chien Pan; Kenji Fujito; Daniel Feezell; Chris G. Van De Walle; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.3619826

High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes

Yuji Zhao, Shinichi Tanaka, Qimin Yan, Chia Yen Huang, Roy B. Chung, Chih Chien Pan, Kenji Fujito, Daniel Feezell, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura

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Abstract

The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar (2021) InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar (2021) substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar (2021) devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the (2021) devices.

Original language	English
Article number	051109
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3619826
State	Published - 1 Aug 2011

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title = "High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes",

abstract = "The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar (2021) InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar (2021) substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar (2021) devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the (2021) devices.",

author = "Yuji Zhao and Shinichi Tanaka and Qimin Yan and Huang, {Chia Yen} and Chung, {Roy B.} and Pan, {Chih Chien} and Kenji Fujito and Daniel Feezell and {Van De Walle}, {Chris G.} and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura",

year = "2011",

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doi = "10.1063/1.3619826",

language = "English",

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T1 - High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes

AU - Zhao, Yuji

AU - Tanaka, Shinichi

AU - Yan, Qimin

AU - Huang, Chia Yen

AU - Chung, Roy B.

AU - Pan, Chih Chien

AU - Fujito, Kenji

AU - Feezell, Daniel

AU - Van De Walle, Chris G.

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar (2021) InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar (2021) substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar (2021) devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the (2021) devices.

AB - The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar (2021) InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar (2021) substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar (2021) devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the (2021) devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes

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