High performance 0.2 μm quasi-enhancement mode In0.35AlAs/In0.35GaAs metamorphic HEMT's with a InGaAs channel composition

Dae Hyun Kim; Sun Young Oh; Jong Jun Kim; Jae Hak Lee; Ki Woong Chung; Kwang Seok Seo

High performance 0.2 μm quasi-enhancement mode In_0.35AlAs/In_0.35GaAs metamorphic HEMT's with a InGaAs channel composition

Dae Hyun Kim, Sun Young Oh, Jong Jun Kim, Jae Hak Lee, Ki Woong Chung, Kwang Seok Seo

Seoul National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A High Electron Mobility Transistor (HEMT) using InAlAs/InGaAs grown on GaAs substrate has been successfully realized. This structure, with an In content of 0.35 and the composite channel, presented several advantages over conventional P-HEMT's on GaAs and LM (Lattice-Match) HEMT's on InP. The Indium content of 35 % in the InAlAs barrier layer gave a higher schottky barrier height (SBH) than that of the LM(Lattice-Matched) HEMT's, which resulted in a higher gate turn-on voltage and a reverse breakdown voltage, and finally led to the excellent enhancement mode operation. The device performance was characterized by DC and microwave measurement. The fabricated InAlAs/InGaAs Metamorphic HEMT's, employing 0.2μm T-gate, showed good DC and microwave characteristics of V_th=-0.2 V, G_m,max=680 mS/mm, f_T=95 GHz, and f_max=252 GHz, respectively.

Original language	English
Pages (from-to)	1036-1040
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	41
Issue number	6
State	Published - Dec 2002

Keywords

GaAs
HEMT
InGaAs
M-HEMT
Metamorphic
Power

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title = "High performance 0.2 μm quasi-enhancement mode In0.35AlAs/In0.35GaAs metamorphic HEMT's with a InGaAs channel composition",

abstract = "A High Electron Mobility Transistor (HEMT) using InAlAs/InGaAs grown on GaAs substrate has been successfully realized. This structure, with an In content of 0.35 and the composite channel, presented several advantages over conventional P-HEMT's on GaAs and LM (Lattice-Match) HEMT's on InP. The Indium content of 35 % in the InAlAs barrier layer gave a higher schottky barrier height (SBH) than that of the LM(Lattice-Matched) HEMT's, which resulted in a higher gate turn-on voltage and a reverse breakdown voltage, and finally led to the excellent enhancement mode operation. The device performance was characterized by DC and microwave measurement. The fabricated InAlAs/InGaAs Metamorphic HEMT's, employing 0.2μm T-gate, showed good DC and microwave characteristics of Vth=-0.2 V, Gm,max=680 mS/mm, fT=95 GHz, and fmax=252 GHz, respectively.",

keywords = "GaAs, HEMT, InGaAs, M-HEMT, Metamorphic, Power",

author = "Kim, {Dae Hyun} and Oh, {Sun Young} and Kim, {Jong Jun} and Lee, {Jae Hak} and Chung, {Ki Woong} and Seo, {Kwang Seok}",

year = "2002",

month = dec,

language = "English",

volume = "41",

pages = "1036--1040",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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}

TY - JOUR

T1 - High performance 0.2 μm quasi-enhancement mode In0.35AlAs/In0.35GaAs metamorphic HEMT's with a InGaAs channel composition

AU - Kim, Dae Hyun

AU - Oh, Sun Young

AU - Kim, Jong Jun

AU - Lee, Jae Hak

AU - Chung, Ki Woong

AU - Seo, Kwang Seok

PY - 2002/12

Y1 - 2002/12

N2 - A High Electron Mobility Transistor (HEMT) using InAlAs/InGaAs grown on GaAs substrate has been successfully realized. This structure, with an In content of 0.35 and the composite channel, presented several advantages over conventional P-HEMT's on GaAs and LM (Lattice-Match) HEMT's on InP. The Indium content of 35 % in the InAlAs barrier layer gave a higher schottky barrier height (SBH) than that of the LM(Lattice-Matched) HEMT's, which resulted in a higher gate turn-on voltage and a reverse breakdown voltage, and finally led to the excellent enhancement mode operation. The device performance was characterized by DC and microwave measurement. The fabricated InAlAs/InGaAs Metamorphic HEMT's, employing 0.2μm T-gate, showed good DC and microwave characteristics of Vth=-0.2 V, Gm,max=680 mS/mm, fT=95 GHz, and fmax=252 GHz, respectively.

AB - A High Electron Mobility Transistor (HEMT) using InAlAs/InGaAs grown on GaAs substrate has been successfully realized. This structure, with an In content of 0.35 and the composite channel, presented several advantages over conventional P-HEMT's on GaAs and LM (Lattice-Match) HEMT's on InP. The Indium content of 35 % in the InAlAs barrier layer gave a higher schottky barrier height (SBH) than that of the LM(Lattice-Matched) HEMT's, which resulted in a higher gate turn-on voltage and a reverse breakdown voltage, and finally led to the excellent enhancement mode operation. The device performance was characterized by DC and microwave measurement. The fabricated InAlAs/InGaAs Metamorphic HEMT's, employing 0.2μm T-gate, showed good DC and microwave characteristics of Vth=-0.2 V, Gm,max=680 mS/mm, fT=95 GHz, and fmax=252 GHz, respectively.

KW - GaAs

KW - HEMT

KW - InGaAs

KW - M-HEMT

KW - Metamorphic

KW - Power

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M3 - Article

AN - SCOPUS:0036956562

SN - 0374-4884

VL - 41

SP - 1036

EP - 1040

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

High performance 0.2 μm quasi-enhancement mode In_0.35AlAs/In_0.35GaAs metamorphic HEMT's with a InGaAs channel composition

Abstract

Keywords

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