High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

Chang Su Kim; Sung Jin Jo; Jong Bok Kim; Seung Yoon Ryu; Joo Hyon Noh; Hong Koo Baik; Se Jong Lee; Kie Moon Song

doi:10.1088/0268-1242/22/7/002

High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO₂-SiO₂/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm² V s^-1, 10⁵ and 0.36 V dec^-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

Original language	English
Article number	002
Pages (from-to)	691-694
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	22
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/22/7/002
State	Published - 1 Jul 2007

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title = "High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate",

abstract = "We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.",

author = "Kim, {Chang Su} and Jo, {Sung Jin} and Kim, {Jong Bok} and Ryu, {Seung Yoon} and Noh, {Joo Hyon} and Baik, {Hong Koo} and Lee, {Se Jong} and Song, {Kie Moon}",

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T1 - High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Kim, Jong Bok

AU - Ryu, Seung Yoon

AU - Noh, Joo Hyon

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

PY - 2007/7/1

Y1 - 2007/7/1

N2 - We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

AB - We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

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