High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

Wonill Ha; Zach Griffith; Dae Hyun Kim; Peter Chen; Miguel Urteaga; Bobby Brar

doi:10.1109/ICIPRM.2010.5516006

High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

Wonill Ha, Zach Griffith, Dae Hyun Kim, Peter Chen, Miguel Urteaga, Bobby Brar

School of Electronics Engineering

Teledyne Technologies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm L_g device showed RF figures-of-merit of 533 GHz f_τ and 343 GHz f_max. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2x20um W_g mHEMT showed 387GHz f_τ, 580GHz f_max. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294GHz) 3-stage G-, H-band common-source amplifier having a nominal S₂₁ mid-band gain of 11-16dB employing thin-film microstrip wiring.

Original language	English
Title of host publication	2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages	140-143
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516006
State	Published - 2010
Event	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan Duration: 31 May 2010 → 4 Jun 2010

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/Territory	Japan
City	Kagawa
Period	31/05/10 → 4/06/10

Keywords

D-mode transistor
E-mode transistor
Feedback amplifier
InP high electron mobility transistor
Metamorphic low loss dielectric layer
Mutiple interconnect layer

Access to Document

10.1109/ICIPRM.2010.5516006

Cite this

Ha, W., Griffith, Z., Kim, D. H., Chen, P., Urteaga, M., & Brar, B. (2010). High performance InP mHEMTs on GaAs substrate with multiple interconnect layers. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 140-143). Article 5516006 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516006

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title = "High performance InP mHEMTs on GaAs substrate with multiple interconnect layers",

abstract = "We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2x20um Wg mHEMT showed 387GHz fτ, 580GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11-16dB employing thin-film microstrip wiring.",

keywords = "D-mode transistor, E-mode transistor, Feedback amplifier, InP high electron mobility transistor, Metamorphic low loss dielectric layer, Mutiple interconnect layer",

author = "Wonill Ha and Zach Griffith and Kim, {Dae Hyun} and Peter Chen and Miguel Urteaga and Bobby Brar",

year = "2010",

doi = "10.1109/ICIPRM.2010.5516006",

language = "English",

isbn = "9781424459209",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "140--143",

booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",

note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",

}

Ha, W, Griffith, Z, Kim, DH, Chen, P, Urteaga, M & Brar, B 2010, High performance InP mHEMTs on GaAs substrate with multiple interconnect layers. in 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516006, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 140-143, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 31/05/10. https://doi.org/10.1109/ICIPRM.2010.5516006

High performance InP mHEMTs on GaAs substrate with multiple interconnect layers. / Ha, Wonill; Griffith, Zach; Kim, Dae Hyun et al.
2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 140-143 5516006 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

AU - Ha, Wonill

AU - Griffith, Zach

AU - Kim, Dae Hyun

AU - Chen, Peter

AU - Urteaga, Miguel

AU - Brar, Bobby

PY - 2010

Y1 - 2010

N2 - We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2x20um Wg mHEMT showed 387GHz fτ, 580GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11-16dB employing thin-film microstrip wiring.

AB - We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2x20um Wg mHEMT showed 387GHz fτ, 580GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11-16dB employing thin-film microstrip wiring.

KW - D-mode transistor

KW - E-mode transistor

KW - Feedback amplifier

KW - InP high electron mobility transistor

KW - Metamorphic low loss dielectric layer

KW - Mutiple interconnect layer

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BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings

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Ha W, Griffith Z, Kim DH, Chen P, Urteaga M, Brar B. High performance InP mHEMTs on GaAs substrate with multiple interconnect layers. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 140-143. 5516006. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2010.5516006

High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

Abstract

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Keywords

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