Abstract
In this paper, a novel gate technology with triple shaped gate structure has been proposed and developed in order to minimize unwanted gate fringing capacitance. Because high gate stem height was difficult to fabricate by means of conventional direct electron beam (E-Beam) lithography method, additional PMGI sacrificial layer was utilized in this new scheme. Increasing gate stem height as an amount of PMGI resist thickness and forming T-shaped gate structure on top of the PMGI layer, triple shaped gate structure could be finally obtained. Applying the developed technology to the fabrication of 0.15μm In0.4GaAs/In0.4AlAs metamorphic HEMT's (M-HEMT's), excellent device cutoff frequency (fT) performance of 164GHz even with 0.15μm technology has been shown owing to the remarkable reduction of gate fringing capacitance. In addition, the usage of 40% indium content in barrier layer gave rise to the improvements in Schottky gate characteristics such as gate turn-on voltage (Von) of +1.03 V and reverse breakdown voltage (BVGD) of -7.8 V, which has important meanings in enhancement-mode operation devices.
Original language | English |
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Pages (from-to) | 374-377 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
State | Published - 2004 |
Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004 |