@inproceedings{27cd6c799a4c4a4e96cf0b0cd3e2f299,
title = "High Performance Sol-gel Processed SnO2 thin film transistor with sol-gel processed ZrO2 layers",
abstract = "We propose an effective process for the enhancement of electrical performance in solution-processed SnO2-based oxide thin-film transistors (TFTs) by adding a ZrO2layer on the active layer. The ZrO2layer was spin coated on the SnO2film with a single coating and double coating process under the same condition. The SnO2 TFTs with double-coated ZrO2 layers showed a saturation mobility of 51.2 cm2/Vs, which was more than four times higher than that of conventional SnO2 TFTs. Furthermore, the subthreshold slope reduced from 1.17 V /decade to 0.36 V /decade for SnO2 TFTs with double-coated ZrO2 layers. These results are attributed to the electron transfer based on the theory of electron donation from high-k dielectrics to oxide semiconductors.",
author = "Lee, {Won Yong} and Bongho Jang and Sojeong Lee and Taegyun Kim and Jaewon Jang",
note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",
year = "2018",
month = aug,
day = "15",
doi = "10.23919/AM-FPD.2018.8437365",
language = "English",
isbn = "9784990875350",
series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
}