TY - JOUR
T1 - High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate
AU - Koslow, Ingrid L.
AU - Sonoda, Junichi
AU - Chung, Roy B.
AU - Pan, Chih Chien
AU - Brinkley, Stuart
AU - Ohta, Hiroaki
AU - Nakamura, Shuji
AU - DenBaars, Steven P.
PY - 2010/8
Y1 - 2010/8
N2 - High power and high efficiency semipolar (303̄1̄) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm2 was 14.48mW and 26.5%, respectively, at 20 mA.
AB - High power and high efficiency semipolar (303̄1̄) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm2 was 14.48mW and 26.5%, respectively, at 20 mA.
UR - http://www.scopus.com/inward/record.url?scp=77957863572&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.080203
DO - 10.1143/JJAP.49.080203
M3 - Article
AN - SCOPUS:77957863572
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 8 PART 1
M1 - 080203
ER -