High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate

Ingrid L. Koslow; Junichi Sonoda; Roy B. Chung; Chih Chien Pan; Stuart Brinkley; Hiroaki Ohta; Shuji Nakamura; Steven P. DenBaars

doi:10.1143/JJAP.49.080203

High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate

Ingrid L. Koslow, Junichi Sonoda, Roy B. Chung, Chih Chien Pan, Stuart Brinkley, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

High power and high efficiency semipolar (303̄1̄) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm² was 14.48mW and 26.5%, respectively, at 20 mA.

Original language	English
Article number	080203
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	8 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.080203
State	Published - Aug 2010

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Koslow, I. L., Sonoda, J., Chung, R. B., Pan, C. C., Brinkley, S., Ohta, H., Nakamura, S., & DenBaars, S. P. (2010). High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 49(8 PART 1), Article 080203. https://doi.org/10.1143/JJAP.49.080203

@article{ce5eab9c4f3f411e813622dc5bc19945,

title = "High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (30{\=3}{\=1}) bulk gan substrate",

abstract = "High power and high efficiency semipolar (30{\=3}{\=1}) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm2 was 14.48mW and 26.5\%, respectively, at 20 mA.",

author = "Koslow, \{Ingrid L.\} and Junichi Sonoda and Chung, \{Roy B.\} and Pan, \{Chih Chien\} and Stuart Brinkley and Hiroaki Ohta and Shuji Nakamura and DenBaars, \{Steven P.\}",

year = "2010",

month = aug,

doi = "10.1143/JJAP.49.080203",

language = "English",

volume = "49",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 PART 1",

}

Koslow, IL, Sonoda, J, Chung, RB, Pan, CC, Brinkley, S, Ohta, H, Nakamura, S & DenBaars, SP 2010, 'High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 49, no. 8 PART 1, 080203. https://doi.org/10.1143/JJAP.49.080203

High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate. / Koslow, Ingrid L.; Sonoda, Junichi; Chung, Roy B. et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 49, No. 8 PART 1, 080203, 08.2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate

AU - Koslow, Ingrid L.

AU - Sonoda, Junichi

AU - Chung, Roy B.

AU - Pan, Chih Chien

AU - Brinkley, Stuart

AU - Ohta, Hiroaki

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

PY - 2010/8

Y1 - 2010/8

N2 - High power and high efficiency semipolar (303̄1̄) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm2 was 14.48mW and 26.5%, respectively, at 20 mA.

AB - High power and high efficiency semipolar (303̄1̄) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1nm was observed between 5-100 mA, in comparison to large blueshifts in c-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 × 500 μm2 was 14.48mW and 26.5%, respectively, at 20 mA.

UR - https://www.scopus.com/pages/publications/77957863572

U2 - 10.1143/JJAP.49.080203

DO - 10.1143/JJAP.49.080203

M3 - Article

AN - SCOPUS:77957863572

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 PART 1

M1 - 080203

ER -

High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate

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