High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

Hong Zhong; Anurag Tyagi; Natalie N. Fellows; Feng Wu; Roy B. Chung; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1063/1.2746418

High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

Hong Zhong, Anurag Tyagi, Natalie N. Fellows, Feng Wu, Roy B. Chung, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

Original language	English
Article number	233504
Journal	Applied Physics Letters
Volume	90
Issue number	23
DOIs	https://doi.org/10.1063/1.2746418
State	Published - 2007

Access to Document

10.1063/1.2746418

Cite this

@article{065b98daaa5a47ada541958848c9fd93,

title = "High power and high efficiency blue light emitting diode on freestanding semipolar (10 {\=1}{\=1}) bulk GaN substrate",

abstract = "Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.",

author = "Hong Zhong and Anurag Tyagi and Fellows, {Natalie N.} and Feng Wu and Chung, {Roy B.} and Makoto Saito and Kenji Fujito and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2007",

doi = "10.1063/1.2746418",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

AU - Zhong, Hong

AU - Tyagi, Anurag

AU - Fellows, Natalie N.

AU - Wu, Feng

AU - Chung, Roy B.

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2007

Y1 - 2007

N2 - Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

AB - Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

UR - http://www.scopus.com/inward/record.url?scp=34250769984&partnerID=8YFLogxK

U2 - 10.1063/1.2746418

DO - 10.1063/1.2746418

M3 - Article

AN - SCOPUS:34250769984

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233504

ER -

High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this