High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

Hong Zhong; Anurag Tyagi; Natalie N. Fellows; Feng Wu; Roy B. Chung; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1063/1.2746418

High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

Hong Zhong
, Anurag Tyagi
, Natalie N. Fellows
, Feng Wu
, Roy B. Chung
, Makoto Saito
, Kenji Fujito
, James S. Speck
, Steven P. DenBaars
, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

Original language	English
Article number	233504
Journal	Applied Physics Letters
Volume	90
Issue number	23
DOIs	https://doi.org/10.1063/1.2746418
State	Published - 2007

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10.1063/1.2746418

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@article{065b98daaa5a47ada541958848c9fd93,

title = "High power and high efficiency blue light emitting diode on freestanding semipolar (10 {\=1}{\=1}) bulk GaN substrate",

abstract = "Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10\% duty cycle) were 29\% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.",

author = "Hong Zhong and Anurag Tyagi and Fellows, \{Natalie N.\} and Feng Wu and Chung, \{Roy B.\} and Makoto Saito and Kenji Fujito and Speck, \{James S.\} and DenBaars, \{Steven P.\} and Shuji Nakamura",

year = "2007",

doi = "10.1063/1.2746418",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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TY - JOUR

T1 - High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

AU - Zhong, Hong

AU - Tyagi, Anurag

AU - Fellows, Natalie N.

AU - Wu, Feng

AU - Chung, Roy B.

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2007

Y1 - 2007

N2 - Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

AB - Blue InGaNGaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (10 1- 1-) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 29% and 16.21 mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.

UR - https://www.scopus.com/pages/publications/34250769984

U2 - 10.1063/1.2746418

DO - 10.1063/1.2746418

M3 - Article

AN - SCOPUS:34250769984

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233504

ER -

High power and high efficiency blue light emitting diode on freestanding semipolar (10 1̄1̄) bulk GaN substrate

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