High power and high efficiency green light emitting diode on free-standing semipolar (112̄2) bulk GaN substrate

Hitoshi Sato; Anurag Tyagi; Hong Zhong; Natalie Fellows; Roy B. Chung; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1002/pssr.200701098

High power and high efficiency green light emitting diode on free-standing semipolar (112̄2) bulk GaN substrate

Hitoshi Sato
, Anurag Tyagi
, Hong Zhong
, Natalie Fellows
, Roy B. Chung
, Makoto Saito
, Kenji Fujito
, James S. Speck
, Steven P. DenBaars
, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

116 Scopus citations

Abstract

We demonstrate a high power green InGaN/GaN multiplequantum-well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defeet density semipolar (112̄2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively.

Original language	English
Pages (from-to)	162-164
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	1
Issue number	4
DOIs	https://doi.org/10.1002/pssr.200701098
State	Published - Jul 2007

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@article{9bd76e207f0b4836ab4f00ec0140b279,

title = "High power and high efficiency green light emitting diode on free-standing semipolar (11{\=2}2) bulk GaN substrate",

abstract = "We demonstrate a high power green InGaN/GaN multiplequantum-well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defeet density semipolar (11{\=2}2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5\% and 15.6 mW, 6.3\%, respectively.",

author = "Hitoshi Sato and Anurag Tyagi and Hong Zhong and Natalie Fellows and Chung, \{Roy B.\} and Makoto Saito and Kenji Fujito and Speck, \{James S.\} and DenBaars, \{Steven P.\} and Shuji Nakamura",

year = "2007",

month = jul,

doi = "10.1002/pssr.200701098",

language = "English",

volume = "1",

pages = "162--164",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - High power and high efficiency green light emitting diode on free-standing semipolar (112̄2) bulk GaN substrate

AU - Sato, Hitoshi

AU - Tyagi, Anurag

AU - Zhong, Hong

AU - Fellows, Natalie

AU - Chung, Roy B.

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2007/7

Y1 - 2007/7

N2 - We demonstrate a high power green InGaN/GaN multiplequantum-well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defeet density semipolar (112̄2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively.

AB - We demonstrate a high power green InGaN/GaN multiplequantum-well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defeet density semipolar (112̄2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively.

UR - https://www.scopus.com/pages/publications/38749097351

U2 - 10.1002/pssr.200701098

DO - 10.1002/pssr.200701098

M3 - Article

AN - SCOPUS:38749097351

SN - 1862-6254

VL - 1

SP - 162

EP - 164

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 4

ER -

High power and high efficiency green light emitting diode on free-standing semipolar (112̄2) bulk GaN substrate

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