High-resolution field effect sensing of ferroelectric charges

Hyoungsoo Ko, Kyunghee Ryu, Hongsik Park, Chulmin Park, Daeyoung Jeon, Yong Kwan Kim, Juhwan Jung, Dong Ki Min, Yunseok Kim, Ho Nyung Lee, Yoondong Park, Hyunjung Shin, Seungbum Hong

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm2, which is equivalent to 1/20 electron per nanometer square at room temperature.

Original languageEnglish
Pages (from-to)1428-1433
Number of pages6
JournalNano Letters
Volume11
Issue number4
DOIs
StatePublished - 13 Apr 2011

Keywords

  • Charge imaging
  • ferroelectric
  • field effect
  • resistive probe
  • scanning probe microscopy

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