Abstract
A SnO2-based thick film gas sensor promoted with Fe2O3 and ZnO (SnFeZn) was developed in this study for the detection of 1 ppm H2S gas at 350 °C. The SnFeZn was prepared by physical mixing of SnO2 with Fe2O3 and ZnO. The SnFeZn sensor showed not only a high response of about 4.5, but also complete recovery on detection of H2S. Moreover, the response of SnFeZn sensor was maintained during multiple cycles of detection and recovery without deactivation, unlike the response magnitude of a SnO2 sensor. These results were due to the effect of the Fe2O3 and ZnO promoters. The Fe2O3 promoter played an important role in the improvement of sensor recovery, and the ZnO promoter played an important role in the enhancement of sensor response.
Original language | English |
---|---|
Pages (from-to) | 617-621 |
Number of pages | 5 |
Journal | Journal of Nanoelectronics and Optoelectronics |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2017 |
Keywords
- FeO
- HS
- Semiconductor gas sensor
- SnO
- ZnO