High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer

Chang Ju Lee; Hyeon Gu Cha; Chul Ho Won; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2013.6628072

High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al₂O₃ layer

Chang Ju Lee, Hyeon Gu Cha, Chul Ho Won, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al₂O₃ and SiO₂ were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al₂O ₃ layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al₂O₃ layer at the high bias conditions.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628072
State	Published - 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 3 Jun 2013 → 5 Jun 2013

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	3/06/13 → 5/06/13

Keywords

AlGaN/GaN
Dual-wavelength detection
Metal-semiconductor-metal
Tunneling insulator
UV sensor

Access to Document

10.1109/EDSSC.2013.6628072

Cite this

Lee, C. J., Cha, H. G., Won, C. H., Lee, J. H., & Hahm, S. H. (2013). High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al₂O₃ layer. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 Article 6628072 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628072

@inproceedings{17231d621d0440acb719f9156fa6cc6a,

title = "High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer",

abstract = "We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al2O3 and SiO2 were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al2O 3 layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al2O3 layer at the high bias conditions.",

keywords = "AlGaN/GaN, Dual-wavelength detection, Metal-semiconductor-metal, Tunneling insulator, UV sensor",

author = "Lee, {Chang Ju} and Cha, {Hyeon Gu} and Won, {Chul Ho} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2013",

doi = "10.1109/EDSSC.2013.6628072",

language = "English",

isbn = "9781467325233",

series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

Lee, CJ, Cha, HG, Won, CH, Lee, JH & Hahm, SH 2013, High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al₂O₃ layer. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628072, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 3/06/13. https://doi.org/10.1109/EDSSC.2013.6628072

High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al₂O₃ layer. / Lee, Chang Ju; Cha, Hyeon Gu; Won, Chul Ho et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628072 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer

AU - Lee, Chang Ju

AU - Cha, Hyeon Gu

AU - Won, Chul Ho

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2013

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N2 - We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al2O3 and SiO2 were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al2O 3 layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al2O3 layer at the high bias conditions.

AB - We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al2O3 and SiO2 were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al2O 3 layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al2O3 layer at the high bias conditions.

KW - AlGaN/GaN

KW - Dual-wavelength detection

KW - Metal-semiconductor-metal

KW - Tunneling insulator

KW - UV sensor

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SN - 9781467325233

T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

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Lee CJ, Cha HG, Won CH, Lee JH, Hahm SH. High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al₂O₃ layer. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628072. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). doi: 10.1109/EDSSC.2013.6628072