Highly non-linear nitrogen doped ZnO based selector device for cross-point array

Nusrat Tamanna; Saiful Haque Misha; Amit Prakash; Jeonghwan Song; Daeseok Lee; Jiyong Woo; Jaesung Park; Hyunsang Hwang

doi:10.1149/2.0031411ssl

Highly non-linear nitrogen doped ZnO based selector device for cross-point array

Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Jaesung Park, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics.

Original language	English
Pages (from-to)	P136-P139
Journal	ECS Solid State Letters
Volume	3
Issue number	11
DOIs	https://doi.org/10.1149/2.0031411ssl
State	Published - 2014

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title = "Highly non-linear nitrogen doped ZnO based selector device for cross-point array",

abstract = "In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics.",

author = "Nusrat Tamanna and Misha, \{Saiful Haque\} and Amit Prakash and Jeonghwan Song and Daeseok Lee and Jiyong Woo and Jaesung Park and Hyunsang Hwang",

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T1 - Highly non-linear nitrogen doped ZnO based selector device for cross-point array

AU - Tamanna, Nusrat

AU - Misha, Saiful Haque

AU - Prakash, Amit

AU - Song, Jeonghwan

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Park, Jaesung

AU - Hwang, Hyunsang

PY - 2014

Y1 - 2014

N2 - In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics.

AB - In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics.

UR - https://www.scopus.com/pages/publications/84924034985

U2 - 10.1149/2.0031411ssl

DO - 10.1149/2.0031411ssl

M3 - Article

AN - SCOPUS:84924034985

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VL - 3

SP - P136-P139

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 11

ER -

Highly non-linear nitrogen doped ZnO based selector device for cross-point array

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