@inproceedings{e5b753bb1b2e4e4b849a7556df24cfa0,
title = "Hold Voltage Behavior in NbOxBased Threshold Switches for Selector Technology and Neuromorphic Computing Applications",
abstract = "We study the insulator-metal transition characteristics of NbOx-based threshold switches to identify how the hold voltage (Vhold), which is a key knob for various applications, can be tuned towards low or high values. Since the hold behavior is rooted in threshold switching, we first investigate the electrical characteristics of the switches with respect to scaling of the NbOx film thickness and cell diameter. We then reveal that the hold properties are mainly related to the stability of the locally transformed metallic phase in the NbOx. Increasing the compliance current not only allows a geometrically thicker and denser phase to be formed, but also elevating the temperature makes the phase thermodynamically favorable, thereby lowering the Vhold.",
keywords = "hold behavior, NbO, Threshold switching",
author = "Kim, \{Hyun Wook\} and Sol Jin and Heebum Kang and Hong, \{Eun Ryeong\} and Jiyong Woo",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798045",
language = "English",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "207--209",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
address = "United States",
}