Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers

Dong Seok Song; Jeongkyun Roh; Changhee Lee; Dae Young Shin; Jin Hyuk Bae; Hyeok Kim

doi:10.1166/jnn.2017.14036

Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers

Dong Seok Song
, Jeongkyun Roh
, Changhee Lee
, Dae Young Shin
, Jin Hyuk Bae
, Hyeok Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.

Original language	English
Pages (from-to)	3378-3381
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14036
State	Published - 2017

Keywords

Hole Injection
N-Type Organic Semiconductors
Organic Diode
Self-Assembled Monolayers
Work Function Tuning

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10.1166/jnn.2017.14036

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title = "Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers",

abstract = "We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.",

keywords = "Hole Injection, N-Type Organic Semiconductors, Organic Diode, Self-Assembled Monolayers, Work Function Tuning",

author = "Song, \{Dong Seok\} and Jeongkyun Roh and Changhee Lee and Shin, \{Dae Young\} and Bae, \{Jin Hyuk\} and Hyeok Kim",

year = "2017",

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language = "English",

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pages = "3378--3381",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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}

TY - JOUR

T1 - Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers

AU - Song, Dong Seok

AU - Roh, Jeongkyun

AU - Lee, Changhee

AU - Shin, Dae Young

AU - Bae, Jin Hyuk

AU - Kim, Hyeok

PY - 2017

Y1 - 2017

N2 - We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.

AB - We describe hole-injection enhancement in n-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT) lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBTtreated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V whereas it was 27 V for the device with the pristine Ag electrode.

KW - Hole Injection

KW - N-Type Organic Semiconductors

KW - Organic Diode

KW - Self-Assembled Monolayers

KW - Work Function Tuning

UR - https://www.scopus.com/pages/publications/85015369504

U2 - 10.1166/jnn.2017.14036

DO - 10.1166/jnn.2017.14036

M3 - Article

AN - SCOPUS:85015369504

SN - 1533-4880

VL - 17

SP - 3378

EP - 3381

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Hole injection in n-type organic semiconductors by tuning metal work function with functional self-assembled monolayers

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