TY - GEN
T1 - Horizontal scanning interferometric system for wafer bump inspection of semiconductor packaging process
AU - Kim, Min Young
AU - Koh, Kyoung Chul
PY - 2009
Y1 - 2009
N2 - With strong needs of continued miniaturization and high density integration of semiconductor packages, the wafer level package technology leads the semiconductor package trend. For high reliability of the devices, wafer bumps and substrate bumps used for their connection junctions need to be in-line inspected in terms of top-height distribution, coplanarity, and volume uniformity. In this paper, a horizontal scanning interferometric system is proposed for bump shape inspection in three dimensions with large field of view and fast inspection speed based on optomechatronic system design concept. For wafer bumps made of solder and gold under transparent film layer, the specially-designed information extraction algorithms from multiple-peak interferogram acquired with variations of the horizontal position of the reference signal generator are suggested, which are composed of top surface profile and under-layer surface profile detection algorithms. A series of experiments is performed, and the effectiveness of the proposed inspection system is verified experimentally based on acquired test results in detail.
AB - With strong needs of continued miniaturization and high density integration of semiconductor packages, the wafer level package technology leads the semiconductor package trend. For high reliability of the devices, wafer bumps and substrate bumps used for their connection junctions need to be in-line inspected in terms of top-height distribution, coplanarity, and volume uniformity. In this paper, a horizontal scanning interferometric system is proposed for bump shape inspection in three dimensions with large field of view and fast inspection speed based on optomechatronic system design concept. For wafer bumps made of solder and gold under transparent film layer, the specially-designed information extraction algorithms from multiple-peak interferogram acquired with variations of the horizontal position of the reference signal generator are suggested, which are composed of top surface profile and under-layer surface profile detection algorithms. A series of experiments is performed, and the effectiveness of the proposed inspection system is verified experimentally based on acquired test results in detail.
KW - 3D measurement
KW - Component
KW - Horizontal scanning interferometer
KW - Linik interferometer
KW - Semiconductor inspection
KW - Wafer bump inspection
UR - http://www.scopus.com/inward/record.url?scp=72749112082&partnerID=8YFLogxK
U2 - 10.1109/ISOT.2009.5326088
DO - 10.1109/ISOT.2009.5326088
M3 - Conference contribution
AN - SCOPUS:72749112082
SN - 9781424442102
T3 - ISOT 2009 - International Symposium on Optomechatronic Technologies
SP - 203
EP - 208
BT - ISOT 2009 - International Symposium on Optomechatronic Technologies
T2 - ISOT 2009 - International Symposium on Optomechatronic Technologies
Y2 - 21 September 2009 through 23 September 2009
ER -